APA (7th ed.) Citation

Çelik-Butler, Z., Mahmud, M., Hao, P., Hou, F., Amey, B., & Pendharkar, S. (2015). Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors. Solid-State Electronics, 111, 141. https://doi.org/10.1016/j.sse.2015.05.043

Chicago Style (17th ed.) Citation

Çelik-Butler, Z., M.I Mahmud, P. Hao, F. Hou, B.L Amey, and S. Pendharkar. "Determination of Active Oxide Trap Density and 1/f Noise Mechanism in RESURF LDMOS Transistors." Solid-State Electronics 111 (2015): 141. https://doi.org/10.1016/j.sse.2015.05.043.

MLA (9th ed.) Citation

Çelik-Butler, Z., et al. "Determination of Active Oxide Trap Density and 1/f Noise Mechanism in RESURF LDMOS Transistors." Solid-State Electronics, vol. 111, 2015, p. 141, https://doi.org/10.1016/j.sse.2015.05.043.