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Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors.

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Bibliographic Details
Title:	Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors.
Authors:	Çelik-Butler, Z.¹ zbutler@uta.edu, Mahmud, M.I.¹, Hao, P.², Hou, F.², Amey, B.L.², Pendharkar, S.²
Source:	Solid-State Electronics. Sep2015, Vol. 111, p141-146. 6p.
Subjects:	Metal oxide semiconductor field-effect transistors, Charge carrier mobility, Silicon oxide, Scattering (Physics), Electric conductivity, Electric resistance
Abstract:	The physical origin of majority charge carrier fluctuations in the SiO 2 interface of Si at accumulation has been investigated and analyzed for differently processed and voltage-rated reduced surface field (RESURF), lateral-double-diffused MOS (LDMOS) transistors. Surface carrier mobility fluctuation due to remote Coulomb scattering by the trapped charge in the gate oxide is identified as the dominant physical mechanism for LDMOS 1/ f noise irrespective of process technologies. A significant contribution to the measured noise has been noted from the surface majority carrier mobility fluctuation due to trapped charge at the accumulation region of the extended drain region, dominant over other sources including the surface minority charge carrier fluctuations in the channel. Active oxide trap density was characterized spatially and for the first time up to ∼0.4 eV above the conduction band-edge of Si. The interface trap density in the unstressed devices (∼8 × 10 6 cm −2 ) increased more than an order of magnitude (∼1 × 10 8 cm −2 ) after the devices were stressed for 10,000 sec at their individual worst drain current and on-resistance degradation conditions. The extracted Si/SiO 2 interface trap density above the silicon conduction band edge was found to be several orders of magnitude lower than that reported for silicon mid-gap energies, even after stressing. Since the traps near the quasi-Fermi level for electrons are active in trapping–detrapping, and the Fermi level is energetically positioned above the conduction band edge of Si in the investigated devices as compared to the previously reported observations, the lower trap density obtained here is an indication for reversal of the well-known exponential trap energy distribution beyond the conduction band-edge of Si. These findings shift the focus from the channel to the gate overlap section of the extended drain and the quality of the Si/SiO 2 interface in that region. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	The physical origin of majority charge carrier fluctuations in the SiO 2 interface of Si at accumulation has been investigated and analyzed for differently processed and voltage-rated reduced surface field (RESURF), lateral-double-diffused MOS (LDMOS) transistors. Surface carrier mobility fluctuation due to remote Coulomb scattering by the trapped charge in the gate oxide is identified as the dominant physical mechanism for LDMOS 1/ f noise irrespective of process technologies. A significant contribution to the measured noise has been noted from the surface majority carrier mobility fluctuation due to trapped charge at the accumulation region of the extended drain region, dominant over other sources including the surface minority charge carrier fluctuations in the channel. Active oxide trap density was characterized spatially and for the first time up to ∼0.4 eV above the conduction band-edge of Si. The interface trap density in the unstressed devices (∼8 × 10 6 cm −2 ) increased more than an order of magnitude (∼1 × 10 8 cm −2 ) after the devices were stressed for 10,000 sec at their individual worst drain current and on-resistance degradation conditions. The extracted Si/SiO 2 interface trap density above the silicon conduction band edge was found to be several orders of magnitude lower than that reported for silicon mid-gap energies, even after stressing. Since the traps near the quasi-Fermi level for electrons are active in trapping–detrapping, and the Fermi level is energetically positioned above the conduction band edge of Si in the investigated devices as compared to the previously reported observations, the lower trap density obtained here is an indication for reversal of the well-known exponential trap energy distribution beyond the conduction band-edge of Si. These findings shift the focus from the channel to the gate overlap section of the extended drain and the quality of the Si/SiO 2 interface in that region. [ABSTRACT FROM AUTHOR]
ISSN:	00381101
DOI:	10.1016/j.sse.2015.05.043