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Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes.

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Title: Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes.
Authors: Besnard, G.1,2,3, Garros, X.1, Andrieu, F.1, Nguyen, P.2, Van Den Daele, W.2, Reynaud, P.2, Schwarzenbach, W.2, Delprat, D.2, Bourdelle, K.K.2, Reimbold, G.1, Cristoloveanu, S.3
Source: Solid-State Electronics. Nov2015, Vol. 113, p127-131. 5p.
Subjects: Hot carriers, Reliability in engineering, Strains & stresses (Mechanics), Metal oxide semiconductor field-effect transistors, Complementary metal oxide semiconductors, Tensile strength
Abstract: The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of I ON / I OFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films. [ABSTRACT FROM AUTHOR]
Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 108432190
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes.
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>. Nov2015, Vol. 113, p127-131. 5p.
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  Data: The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of I ON / I OFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.sse.2015.05.021
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 127
    Subjects:
      – SubjectFull: Hot carriers
        Type: general
      – SubjectFull: Reliability in engineering
        Type: general
      – SubjectFull: Strains & stresses (Mechanics)
        Type: general
      – SubjectFull: Metal oxide semiconductor field-effect transistors
        Type: general
      – SubjectFull: Complementary metal oxide semiconductors
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      – SubjectFull: Tensile strength
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              M: 11
              Text: Nov2015
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