Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes.
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| Title: | Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes. |
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| Authors: | Besnard, G.1,2,3, Garros, X.1, Andrieu, F.1, Nguyen, P.2, Van Den Daele, W.2, Reynaud, P.2, Schwarzenbach, W.2, Delprat, D.2, Bourdelle, K.K.2, Reimbold, G.1, Cristoloveanu, S.3 |
| Source: | Solid-State Electronics. Nov2015, Vol. 113, p127-131. 5p. |
| Subjects: | Hot carriers, Reliability in engineering, Strains & stresses (Mechanics), Metal oxide semiconductor field-effect transistors, Complementary metal oxide semiconductors, Tensile strength |
| Abstract: | The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of I ON / I OFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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