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Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers.

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Title: Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers.
Authors: Kettle, J.1 j.kettle@bangor.ac.uk, Chang, S.-W.2, Horie, M.2
Source: Microelectronic Engineering. Oct2015, Vol. 146, p105-108. 4p.
Subjects: Fabrication (Manufacturing), Photodiode manufacturing, Zinc oxide, Wavelengths, Ultraviolet radiation
Abstract: We report the fabrication and characterisation of an organic–inorganic hybrid photodiode (HPD) based on PCPDTBT and Zinc Oxide (ZnO) photoactive layers. The main benefit of using these materials is that multi spectral light sensing from the UV through to the Near Infrared is achieved, encompassing wavelengths ∼350–870 nm. To our knowledge, this is one of the widest range responses reported for an inorganic–organic hybrid photodiode. The evaluation of the technology shows the devices exhibit one of the lowest levels of dark currents reported for a HPD, but some limitations exist due to a low on–off ratio and non-linearity of the responsivity at low incident power. The stability of devices made with PCPDTBT:ZnO active layers is compared to more commonly reported P3HT:ZnO devices in dark and it is shown that using PCPDTBT substantially improves lifetime. [ABSTRACT FROM AUTHOR]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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An: 109087516
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  Data: Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers.
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  Data: <searchLink fieldCode="AR" term="%22Kettle%2C+J%2E%22">Kettle, J.</searchLink><relatesTo>1</relatesTo><i> j.kettle@bangor.ac.uk</i><br /><searchLink fieldCode="AR" term="%22Chang%2C+S%2E-W%2E%22">Chang, S.-W.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Horie%2C+M%2E%22">Horie, M.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Oct2015, Vol. 146, p105-108. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Fabrication+%28Manufacturing%29%22">Fabrication (Manufacturing)</searchLink><br /><searchLink fieldCode="DE" term="%22Photodiode+manufacturing%22">Photodiode manufacturing</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide%22">Zinc oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Wavelengths%22">Wavelengths</searchLink><br /><searchLink fieldCode="DE" term="%22Ultraviolet+radiation%22">Ultraviolet radiation</searchLink>
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  Data: We report the fabrication and characterisation of an organic–inorganic hybrid photodiode (HPD) based on PCPDTBT and Zinc Oxide (ZnO) photoactive layers. The main benefit of using these materials is that multi spectral light sensing from the UV through to the Near Infrared is achieved, encompassing wavelengths ∼350–870 nm. To our knowledge, this is one of the widest range responses reported for an inorganic–organic hybrid photodiode. The evaluation of the technology shows the devices exhibit one of the lowest levels of dark currents reported for a HPD, but some limitations exist due to a low on–off ratio and non-linearity of the responsivity at low incident power. The stability of devices made with PCPDTBT:ZnO active layers is compared to more commonly reported P3HT:ZnO devices in dark and it is shown that using PCPDTBT substantially improves lifetime. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.mee.2015.05.006
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 105
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      – SubjectFull: Fabrication (Manufacturing)
        Type: general
      – SubjectFull: Photodiode manufacturing
        Type: general
      – SubjectFull: Zinc oxide
        Type: general
      – SubjectFull: Wavelengths
        Type: general
      – SubjectFull: Ultraviolet radiation
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      – TitleFull: Fabrication and characterisation of hybrid photodiodes based on PCPDTBT–ZnO active layers.
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              Text: Oct2015
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