Nonlocal study of the near field radiative heat transfer between two n-doped semiconductors.
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| Title: | Nonlocal study of the near field radiative heat transfer between two n-doped semiconductors. |
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| Authors: | Singer, F.1, Ezzahri, Y.1, Joulain, K.1 karl.joulain@univ-poitiers.fr |
| Source: | International Journal of Heat & Mass Transfer. Nov2015, Vol. 90, p34-39. 6p. |
| Subjects: | Heat transfer, Near-fields, Divergence theorem, Semiconductors, Permittivity, Dielectric properties |
| Abstract: | We study in this work the near-field radiative heat transfer between two semi-infinite parallel planes of highly n-doped semiconductors. Using a nonlocal model of the dielectric permittivity, usually used for the case of metallic planes, we show that the radiative heat transfer coefficient saturates as the separation distance is reduced for high doping concentration. These results replace the 1/ d 2 infinite divergence obtained in the local model case. Different features of the obtained results are shown to relate physically to the parameters of the materials, mainly the doping concentration and the plasmon frequency. [ABSTRACT FROM AUTHOR] |
| Copyright of International Journal of Heat & Mass Transfer is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 109126553 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Nonlocal study of the near field radiative heat transfer between two n-doped semiconductors. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Singer%2C+F%2E%22">Singer, F.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ezzahri%2C+Y%2E%22">Ezzahri, Y.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Joulain%2C+K%2E%22">Joulain, K.</searchLink><relatesTo>1</relatesTo><i> karl.joulain@univ-poitiers.fr</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Heat+%26+Mass+Transfer%22">International Journal of Heat & Mass Transfer</searchLink>. Nov2015, Vol. 90, p34-39. 6p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Heat+transfer%22">Heat transfer</searchLink><br /><searchLink fieldCode="DE" term="%22Near-fields%22">Near-fields</searchLink><br /><searchLink fieldCode="DE" term="%22Divergence+theorem%22">Divergence theorem</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Permittivity%22">Permittivity</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+properties%22">Dielectric properties</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: We study in this work the near-field radiative heat transfer between two semi-infinite parallel planes of highly n-doped semiconductors. Using a nonlocal model of the dielectric permittivity, usually used for the case of metallic planes, we show that the radiative heat transfer coefficient saturates as the separation distance is reduced for high doping concentration. These results replace the 1/ d 2 infinite divergence obtained in the local model case. Different features of the obtained results are shown to relate physically to the parameters of the materials, mainly the doping concentration and the plasmon frequency. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of International Journal of Heat & Mass Transfer is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.ijheatmasstransfer.2015.06.034 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 34 Subjects: – SubjectFull: Heat transfer Type: general – SubjectFull: Near-fields Type: general – SubjectFull: Divergence theorem Type: general – SubjectFull: Semiconductors Type: general – SubjectFull: Permittivity Type: general – SubjectFull: Dielectric properties Type: general Titles: – TitleFull: Nonlocal study of the near field radiative heat transfer between two n-doped semiconductors. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Singer, F. – PersonEntity: Name: NameFull: Ezzahri, Y. – PersonEntity: Name: NameFull: Joulain, K. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Text: Nov2015 Type: published Y: 2015 Identifiers: – Type: issn-print Value: 00179310 Numbering: – Type: volume Value: 90 Titles: – TitleFull: International Journal of Heat & Mass Transfer Type: main |
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