Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation.
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| Title: | Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation. |
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| Authors: | Marquez, Carlos1 carlosmg@ugr.es, Rodriguez, Noel1, Gamiz, Francisco1, Ruiz, Rafael1, Ohata, Akiko2 |
| Source: | Solid-State Electronics. Mar2016, Vol. 117, p60-65. 6p. |
| Subjects: | Burst noise, Silicon, Metal oxide semiconductor field-effect transistors, Thermal properties, Electronic noise |
| Abstract: | Random Telegraph Noise (RTN) has been studied in Ultra-Thin Fully-Depleted Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used to identify devices with a single active trap. The physical characteristics of the trap have been extracted based on Shockley–Read–Hall models, revealing the possible trends of capture and emission times of the trap according to its physical and energetic position. The effect of the temperature on the characteristic times has been studied in the range from 248 to 323 K validating the results obtained at room temperature. Finally, the impact of back-bias on the RTN fluctuation has been modelled through the Lim–Fossum interface coupling relationships, allowing to predict accurately the experimental results. [ABSTRACT FROM AUTHOR] |
| Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 112176545 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Marquez%2C+Carlos%22">Marquez, Carlos</searchLink><relatesTo>1</relatesTo><i> carlosmg@ugr.es</i><br /><searchLink fieldCode="AR" term="%22Rodriguez%2C+Noel%22">Rodriguez, Noel</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Gamiz%2C+Francisco%22">Gamiz, Francisco</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ruiz%2C+Rafael%22">Ruiz, Rafael</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ohata%2C+Akiko%22">Ohata, Akiko</searchLink><relatesTo>2</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>. Mar2016, Vol. 117, p60-65. 6p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Burst+noise%22">Burst noise</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+properties%22">Thermal properties</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+noise%22">Electronic noise</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Random Telegraph Noise (RTN) has been studied in Ultra-Thin Fully-Depleted Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used to identify devices with a single active trap. The physical characteristics of the trap have been extracted based on Shockley–Read–Hall models, revealing the possible trends of capture and emission times of the trap according to its physical and energetic position. The effect of the temperature on the characteristic times has been studied in the range from 248 to 323 K validating the results obtained at room temperature. Finally, the impact of back-bias on the RTN fluctuation has been modelled through the Lim–Fossum interface coupling relationships, allowing to predict accurately the experimental results. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.sse.2015.11.022 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 60 Subjects: – SubjectFull: Burst noise Type: general – SubjectFull: Silicon Type: general – SubjectFull: Metal oxide semiconductor field-effect transistors Type: general – SubjectFull: Thermal properties Type: general – SubjectFull: Electronic noise Type: general Titles: – TitleFull: Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Marquez, Carlos – PersonEntity: Name: NameFull: Rodriguez, Noel – PersonEntity: Name: NameFull: Gamiz, Francisco – PersonEntity: Name: NameFull: Ruiz, Rafael – PersonEntity: Name: NameFull: Ohata, Akiko IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 03 Text: Mar2016 Type: published Y: 2016 Identifiers: – Type: issn-print Value: 00381101 Numbering: – Type: volume Value: 117 Titles: – TitleFull: Solid-State Electronics Type: main |
| ResultId | 1 |
