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Power Efficient Level Shifter for 16 nm FinFET Near Threshold Circuits.

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Title: Power Efficient Level Shifter for 16 nm FinFET Near Threshold Circuits.
Authors: Shapiro, Alexander1, Friedman, Eby G.1
Source: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. Feb2016, Vol. 24 Issue 2, p774-778. 5p.
Subjects: Microprocessor energy consumption, Integrated circuit design, Phase shifters, Threshold voltage, Energy dissipation
Abstract: Since the minimum feature size has shrunk beyond the sub-30-nm node, power density has become the major factor in modern microprocessors. Techniques such as dynamic voltage scaling operating down to near threshold voltage levels and supporting multiple voltage domains have become necessary to reduce dynamic as well as static power. A key component of these techniques is a level shifter that serves different voltage domains. This level shifter must be high speed and power efficient. The proposed level shifter translates voltages ranging from 250 to 790 mV, and exhibits 42% shorter delay, 45% lower energy consumption, and 48% lower static power dissipation. In addition, the proposed level shifter exhibits symmetric rise and fall transition times with up to 12% skew at the extreme conditions over the maximum range of voltages. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Very Large Scale Integration (VLSI) Systems is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 112441917
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Power Efficient Level Shifter for 16 nm FinFET Near Threshold Circuits.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Shapiro%2C+Alexander%22">Shapiro, Alexander</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Friedman%2C+Eby+G%2E%22">Friedman, Eby G.</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Very+Large+Scale+Integration+%28VLSI%29+Systems%22">IEEE Transactions on Very Large Scale Integration (VLSI) Systems</searchLink>. Feb2016, Vol. 24 Issue 2, p774-778. 5p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Microprocessor+energy+consumption%22">Microprocessor energy consumption</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+circuit+design%22">Integrated circuit design</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+shifters%22">Phase shifters</searchLink><br /><searchLink fieldCode="DE" term="%22Threshold+voltage%22">Threshold voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+dissipation%22">Energy dissipation</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Since the minimum feature size has shrunk beyond the sub-30-nm node, power density has become the major factor in modern microprocessors. Techniques such as dynamic voltage scaling operating down to near threshold voltage levels and supporting multiple voltage domains have become necessary to reduce dynamic as well as static power. A key component of these techniques is a level shifter that serves different voltage domains. This level shifter must be high speed and power efficient. The proposed level shifter translates voltages ranging from 250 to 790 mV, and exhibits 42% shorter delay, 45% lower energy consumption, and 48% lower static power dissipation. In addition, the proposed level shifter exhibits symmetric rise and fall transition times with up to 12% skew at the extreme conditions over the maximum range of voltages. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Very Large Scale Integration (VLSI) Systems is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/TVLSI.2015.2409051
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 774
    Subjects:
      – SubjectFull: Microprocessor energy consumption
        Type: general
      – SubjectFull: Integrated circuit design
        Type: general
      – SubjectFull: Phase shifters
        Type: general
      – SubjectFull: Threshold voltage
        Type: general
      – SubjectFull: Energy dissipation
        Type: general
    Titles:
      – TitleFull: Power Efficient Level Shifter for 16 nm FinFET Near Threshold Circuits.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Shapiro, Alexander
      – PersonEntity:
          Name:
            NameFull: Friedman, Eby G.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 02
              Text: Feb2016
              Type: published
              Y: 2016
          Identifiers:
            – Type: issn-print
              Value: 10638210
          Numbering:
            – Type: volume
              Value: 24
            – Type: issue
              Value: 2
          Titles:
            – TitleFull: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
              Type: main
ResultId 1