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FinFET Design Considerations Based on Schmitt Trigger with Slew Rate and Gain-Bandwidth Product Analysis.

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Title: FinFET Design Considerations Based on Schmitt Trigger with Slew Rate and Gain-Bandwidth Product Analysis.
Authors: Sharma, Pawan1, Khandelwal, Saurabh1, Akashe, Shyam1
Source: Wireless Personal Communications. Mar2016, Vol. 87 Issue 1, p83-97. 15p.
Subjects: Trigger circuits, Transition flow, Radio wave propagation, Leakage inductance, Bandwidth research
Abstract: The FinFET device technology has become a strong adjunct to Schmitt trigger (ST). ST response to a sluggish input signal with a quick transition time at the output. This paper presents a systematic design of Schmitt trigger using 45 nm FinFET for low power supply application. The FinFET based Schmitt trigger optimizes propagation delay and leakage power while sustaining good noise response, gain-bandwidth product and slew rate. Our design has achieves delay up to 264 ps with a little leakage power of 1.9131 pW for a sine wave having frequency 1 GHz thus a result of implementing Schmitt trigger with FinFET technology we obtain power dissipation of 1.636 mW with 0.7 V supply. The performance parameters such as slew rate, output noise voltage, gain-bandwidth product, leakage power, power dissipation etc. have been carried out by using cadence virtuoso design tool at 45 nm FinFET implemented in independent gate mode. After simulation all these parameters has been compared with previous published 4T Schmitt trigger at 45 nm with this design and found that they are in close vicinity. Our design reduces delay, leakage power and dynamic power. FinFET based Schmitt trigger offers delay and leakage power reduction ≈37.38 and ≈75.15 % respectively at 0.7 V power supply. [ABSTRACT FROM AUTHOR]
Copyright of Wireless Personal Communications is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: FinFET Design Considerations Based on Schmitt Trigger with Slew Rate and Gain-Bandwidth Product Analysis.
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  Data: <searchLink fieldCode="JN" term="%22Wireless+Personal+Communications%22">Wireless Personal Communications</searchLink>. Mar2016, Vol. 87 Issue 1, p83-97. 15p.
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  Data: <searchLink fieldCode="DE" term="%22Trigger+circuits%22">Trigger circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+flow%22">Transition flow</searchLink><br /><searchLink fieldCode="DE" term="%22Radio+wave+propagation%22">Radio wave propagation</searchLink><br /><searchLink fieldCode="DE" term="%22Leakage+inductance%22">Leakage inductance</searchLink><br /><searchLink fieldCode="DE" term="%22Bandwidth+research%22">Bandwidth research</searchLink>
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  Label: Abstract
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  Data: The FinFET device technology has become a strong adjunct to Schmitt trigger (ST). ST response to a sluggish input signal with a quick transition time at the output. This paper presents a systematic design of Schmitt trigger using 45 nm FinFET for low power supply application. The FinFET based Schmitt trigger optimizes propagation delay and leakage power while sustaining good noise response, gain-bandwidth product and slew rate. Our design has achieves delay up to 264 ps with a little leakage power of 1.9131 pW for a sine wave having frequency 1 GHz thus a result of implementing Schmitt trigger with FinFET technology we obtain power dissipation of 1.636 mW with 0.7 V supply. The performance parameters such as slew rate, output noise voltage, gain-bandwidth product, leakage power, power dissipation etc. have been carried out by using cadence virtuoso design tool at 45 nm FinFET implemented in independent gate mode. After simulation all these parameters has been compared with previous published 4T Schmitt trigger at 45 nm with this design and found that they are in close vicinity. Our design reduces delay, leakage power and dynamic power. FinFET based Schmitt trigger offers delay and leakage power reduction ≈37.38 and ≈75.15 % respectively at 0.7 V power supply. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Wireless Personal Communications is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s11277-015-3027-5
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        Text: English
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        Type: general
      – SubjectFull: Transition flow
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      – SubjectFull: Radio wave propagation
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      – SubjectFull: Leakage inductance
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              Text: Mar2016
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