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Optical waveguides fabricated by nitrogen ion implantation in fused silica.

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Title: Optical waveguides fabricated by nitrogen ion implantation in fused silica.
Authors: Chun-Xiao Liu1 cxliuopt@163.com, Li-Li Fu2, Rui-Lin Zheng1, Hai-Tao Guo3, Zhi-Guang Zhou3, Wei-Nan Li3, She-Bao Lin4, Wei Wei1 weiwei@njupt.edu.cn
Source: Optical Engineering. Feb2016, Vol. 55 Issue 2, p1-5. 5p.
Subjects: Optical waveguides, Integrated optics, Ion implantation, Ion bombardment, Fused silica
Abstract: We report on the fabrication of waveguides in fused silica using 4.5-MeV nitrogen ion implantation with a fluence of 5.0 x 1014 ions/cm². The prism-coupling method was employed to measure the effective refractive indices of guiding modes at the wavelengths of 632.8 and 1539 nm. The effective refractive indices of the first few modes were higher than that of the substrate. The refractive index profiles at 632.8 and 1539 nm were reconstructed by the reflectivity calculation method. Positive index changes were induced in the waveguide layers. The end-face coupling method was used to measure the near-field light intensity distributions at the wavelength of 632.8 nm and the finite-difference beam propagation method was applied to simulate the guided mode profile at the wavelength of 1539 nm. The waveguide structures emerge as candidates for integrated photonic devices. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:We report on the fabrication of waveguides in fused silica using 4.5-MeV nitrogen ion implantation with a fluence of 5.0 x 1014 ions/cm². The prism-coupling method was employed to measure the effective refractive indices of guiding modes at the wavelengths of 632.8 and 1539 nm. The effective refractive indices of the first few modes were higher than that of the substrate. The refractive index profiles at 632.8 and 1539 nm were reconstructed by the reflectivity calculation method. Positive index changes were induced in the waveguide layers. The end-face coupling method was used to measure the near-field light intensity distributions at the wavelength of 632.8 nm and the finite-difference beam propagation method was applied to simulate the guided mode profile at the wavelength of 1539 nm. The waveguide structures emerge as candidates for integrated photonic devices. [ABSTRACT FROM AUTHOR]
ISSN:00913286
DOI:10.1117/1.OE.55.2.027105