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Current-Mode High-Precision Full-Wave Rectifier Based on Carbon Nanotube Field Effect Transistors.

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Title: Current-Mode High-Precision Full-Wave Rectifier Based on Carbon Nanotube Field Effect Transistors.
Authors: Talebipour, Neda1 n.talebipour@iauk.ac.ir, Keshavarzian, Peiman2 keshavarzian@iauk.ac.ir
Source: Majlesi Journal of Electrical Engineering. Sep2015, Vol. 9 Issue 3, p43-51. 9p.
Subjects: Full-wave rectifiers, Carbon nanotube field effect transistors, Direct currents, Standard deviations, Transistor design & construction, Computer simulation
Abstract: This paper presents a novel design of a high performance current mode (CM) precision full-wave rectifier by using just four diode-tied carbon nanotube field effect transistors. To compare the behavior of the proposed design, the frequency dependent RMS error and DC transient value for different values of input current amplitudes are evaluated. Extensive simulation results using HSpice demonstrate that the proposed circuit has a good performance at high frequencies. The main advantages of the proposed design over the previous designs are the minimal number of the transistors, small size, circuit simplicity, high accuracy and capability of rectifying low-level signals at high frequencies with little or no distortion. The circuit also provides good temperature stability. [ABSTRACT FROM AUTHOR]
Copyright of Majlesi Journal of Electrical Engineering is the property of OICC Press and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Current-Mode High-Precision Full-Wave Rectifier Based on Carbon Nanotube Field Effect Transistors.
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  Data: <searchLink fieldCode="AR" term="%22Talebipour%2C+Neda%22">Talebipour, Neda</searchLink><relatesTo>1</relatesTo><i> n.talebipour@iauk.ac.ir</i><br /><searchLink fieldCode="AR" term="%22Keshavarzian%2C+Peiman%22">Keshavarzian, Peiman</searchLink><relatesTo>2</relatesTo><i> keshavarzian@iauk.ac.ir</i>
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  Data: <searchLink fieldCode="JN" term="%22Majlesi+Journal+of+Electrical+Engineering%22">Majlesi Journal of Electrical Engineering</searchLink>. Sep2015, Vol. 9 Issue 3, p43-51. 9p.
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  Data: <searchLink fieldCode="DE" term="%22Full-wave+rectifiers%22">Full-wave rectifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Carbon+nanotube+field+effect+transistors%22">Carbon nanotube field effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Direct+currents%22">Direct currents</searchLink><br /><searchLink fieldCode="DE" term="%22Standard+deviations%22">Standard deviations</searchLink><br /><searchLink fieldCode="DE" term="%22Transistor+design+%26+construction%22">Transistor design & construction</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+simulation%22">Computer simulation</searchLink>
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  Label: Abstract
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  Data: This paper presents a novel design of a high performance current mode (CM) precision full-wave rectifier by using just four diode-tied carbon nanotube field effect transistors. To compare the behavior of the proposed design, the frequency dependent RMS error and DC transient value for different values of input current amplitudes are evaluated. Extensive simulation results using HSpice demonstrate that the proposed circuit has a good performance at high frequencies. The main advantages of the proposed design over the previous designs are the minimal number of the transistors, small size, circuit simplicity, high accuracy and capability of rectifying low-level signals at high frequencies with little or no distortion. The circuit also provides good temperature stability. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Majlesi Journal of Electrical Engineering is the property of OICC Press and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 43
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      – SubjectFull: Full-wave rectifiers
        Type: general
      – SubjectFull: Carbon nanotube field effect transistors
        Type: general
      – SubjectFull: Direct currents
        Type: general
      – SubjectFull: Standard deviations
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      – SubjectFull: Transistor design & construction
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      – SubjectFull: Computer simulation
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              Text: Sep2015
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