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Large negative magnetoresistance effects in Co2Cr0.6Fe0.4Al

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Title: Large negative magnetoresistance effects in Co2Cr0.6Fe0.4Al
Authors: Block, T.1, Felser, C.1 felser@mail.uni-mainz.de, Jakob, G.2, Ensling, J.1, Mühling, B.1, Gütlich, P.1, Cava, R.J.3
Source: Journal of Solid State Chemistry. Dec2003, Vol. 176 Issue 2, p646. 6p.
Subjects: Magnetoresistance, Magnetic fields, Spintronics, Polycrystals
Abstract: Materials, which display large changes in resistivity in response to an applied magnetic field (magnetoresistance) are currently of great interest due to their potential for applications in magnetic sensors, magnetic random access memories, and spintronics. Guided by striking features in the electronic structure of several magnetic compounds, we prepared the Heusler compound Co2Cr0.6Fe0.4Al. Based on our band structure calculations, we have chosen this composition in order to obtain a half-metallic ferromagnet with a van Hove singularity in the vicinity of the Fermi energy in the majority spin channel and a gap in the minority spin channel. We find a magnetoresistive effect of 30% in a small magnetic field of 0.1 T at room temperature. This demonstrates the feasibility of a cheap and simple magnetic sensor based on polycrystalline, intermetallic material. [Copyright &y& Elsevier]
Copyright of Journal of Solid State Chemistry is the property of Academic Press Inc. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
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PubType: Academic Journal
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  Data: <searchLink fieldCode="DE" term="%22Magnetoresistance%22">Magnetoresistance</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetic+fields%22">Magnetic fields</searchLink><br /><searchLink fieldCode="DE" term="%22Spintronics%22">Spintronics</searchLink><br /><searchLink fieldCode="DE" term="%22Polycrystals%22">Polycrystals</searchLink>
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  Data: Materials, which display large changes in resistivity in response to an applied magnetic field (magnetoresistance) are currently of great interest due to their potential for applications in magnetic sensors, magnetic random access memories, and spintronics. Guided by striking features in the electronic structure of several magnetic compounds, we prepared the Heusler compound Co2Cr0.6Fe0.4Al. Based on our band structure calculations, we have chosen this composition in order to obtain a half-metallic ferromagnet with a van Hove singularity in the vicinity of the Fermi energy in the majority spin channel and a gap in the minority spin channel. We find a magnetoresistive effect of 30% in a small magnetic field of 0.1 T at room temperature. This demonstrates the feasibility of a cheap and simple magnetic sensor based on polycrystalline, intermetallic material. [Copyright &y& Elsevier]
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  Data: <i>Copyright of Journal of Solid State Chemistry is the property of Academic Press Inc. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.jssc.2003.07.002
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      – Code: eng
        Text: English
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        PageCount: 6
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        Type: general
      – SubjectFull: Magnetic fields
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      – SubjectFull: Spintronics
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              Text: Dec2003
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