Thermal shock and degradation of metallization systems on silicon.
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| Title: | Thermal shock and degradation of metallization systems on silicon. |
|---|---|
| Authors: | Skvortsov, Arkady1, Zuev, Sergey1, Koryachko, Marina1, Glinskiy, Vadim1 |
| Source: | Microelectronics International. 2016, Vol. 33 Issue 2, p102-106. 5p. |
| Subjects: | Thermal shock, Silicon, Aluminum metallurgy, Microscopy, Thin films |
| Abstract: | Purpose The purpose of this study is to investigate the mechanisms of degradation of aluminum metallization under conditions of thermal shock caused by rectangular current pulses (amplitude j < 8 × 1010 A/m2, duration t < 800 μs).Design/methodology/approach The results were obtained using oscillography and optical microscopy and through the construction of an empirical model of the thermal degradation of metallization systems.Findings Initially, for the authors’ studies, they deduced an equation that associated the depth of melting with the parameters of a current pulse.Research limitations/implications The authors were able to observe effects only in systems with appropriate adhesion of the thin metal films. For the systems with bad adhesion, the main mechanisms of degradation were associated with the melting of the metal, the formation of melted drops (up to 20 mcm in size) and the movement of these drops along the electrical field due to the electrocapillary effect.Practical/implications The mechanisms the authors studied could only occur in high-power semiconductor devices.Originality/value The principal mechanism of melting of a metallization track is linked to the heat dissipation at the interface of solid and liquid phases under conditions of thermal shock. The authors estimated the mechanical stresses in subsurface layers of silicon in the proximity of a non-stationary thermal source. The authors’ results show that the mechanical stresses that are strong enough to form dislocations emerge with current flow with power measuring approximately 0.7 Pkr. [ABSTRACT FROM AUTHOR] |
| Copyright of Microelectronics International is the property of Emerald Publishing Limited and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 115641510 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Thermal shock and degradation of metallization systems on silicon. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Skvortsov%2C+Arkady%22">Skvortsov, Arkady</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zuev%2C+Sergey%22">Zuev, Sergey</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Koryachko%2C+Marina%22">Koryachko, Marina</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Glinskiy%2C+Vadim%22">Glinskiy, Vadim</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Microelectronics+International%22">Microelectronics International</searchLink>. 2016, Vol. 33 Issue 2, p102-106. 5p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thermal+shock%22">Thermal shock</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Aluminum+metallurgy%22">Aluminum metallurgy</searchLink><br /><searchLink fieldCode="DE" term="%22Microscopy%22">Microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Purpose The purpose of this study is to investigate the mechanisms of degradation of aluminum metallization under conditions of thermal shock caused by rectangular current pulses (amplitude j < 8 × 1010 A/m2, duration t < 800 μs).Design/methodology/approach The results were obtained using oscillography and optical microscopy and through the construction of an empirical model of the thermal degradation of metallization systems.Findings Initially, for the authors’ studies, they deduced an equation that associated the depth of melting with the parameters of a current pulse.Research limitations/implications The authors were able to observe effects only in systems with appropriate adhesion of the thin metal films. For the systems with bad adhesion, the main mechanisms of degradation were associated with the melting of the metal, the formation of melted drops (up to 20 mcm in size) and the movement of these drops along the electrical field due to the electrocapillary effect.Practical/implications The mechanisms the authors studied could only occur in high-power semiconductor devices.Originality/value The principal mechanism of melting of a metallization track is linked to the heat dissipation at the interface of solid and liquid phases under conditions of thermal shock. The authors estimated the mechanical stresses in subsurface layers of silicon in the proximity of a non-stationary thermal source. The authors’ results show that the mechanical stresses that are strong enough to form dislocations emerge with current flow with power measuring approximately 0.7 Pkr. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Microelectronics International is the property of Emerald Publishing Limited and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1108/MI-05-2015-0049 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 102 Subjects: – SubjectFull: Thermal shock Type: general – SubjectFull: Silicon Type: general – SubjectFull: Aluminum metallurgy Type: general – SubjectFull: Microscopy Type: general – SubjectFull: Thin films Type: general Titles: – TitleFull: Thermal shock and degradation of metallization systems on silicon. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Skvortsov, Arkady – PersonEntity: Name: NameFull: Zuev, Sergey – PersonEntity: Name: NameFull: Koryachko, Marina – PersonEntity: Name: NameFull: Glinskiy, Vadim IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: 2016 Type: published Y: 2016 Identifiers: – Type: issn-print Value: 13565362 Numbering: – Type: volume Value: 33 – Type: issue Value: 2 Titles: – TitleFull: Microelectronics International Type: main |
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