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Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe.

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Title: Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe.
Authors: Gu, R.1, Lei, W.1 wen.lei@uwa.edu.au, Antoszewski, J.1, Faraone, L.1
Source: Journal of Electronic Materials. Sep2016, Vol. 45 Issue 9, p4596-4602. 7p.
Subjects: Electromagnetic waves, Cathode rays, Ionizing radiation, X-rays, Lattice dynamics
Abstract: Si, Ge, and GaAs have been extensively investigated as alternative substrates for molecular-beam epitaxy (MBE) growth of HgCdTe and, at present, are widely used for HgCdTe-based infrared focal-plane arrays. However, the problem of high dislocation density in HgCdTe layers grown on these lattice-mismatched substrates has yet to be resolved. In this work, we investigated another alternative substrate, GaSb, which has a significantly smaller lattice mismatch with HgCdTe in comparison with Si, Ge, and GaAs, and is readily available as large-area, epiready wafers at much lower cost in comparison with lattice-matched CdZnTe substrates. The resultant stress due to lattice and thermal mismatch between the HgCdTe epilayer and various substrates has been calculated in this work using the elasticity matrix, and the corresponding stress distribution simulated using ANSYS. The simulated structures were matched by experimental samples involving MBE growth of HgCdTe on GaAs, GaSb, and CdZnTe substrates, and were characterized via reflection high-energy electron diffraction and x-ray diffraction analysis, followed by etch pit density (EPD) analysis. In comparison with other alternative substrates, GaSb is shown to have lower interface stress and lower EPD, rendering it an interesting and promising alternative substrate material for HgCdTe epitaxy. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  – Type: pdflink
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Header DbId: egs
DbLabel: Engineering Source
An: 117022998
AccessLevel: 6
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PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Gu%2C+R%2E%22">Gu, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lei%2C+W%2E%22">Lei, W.</searchLink><relatesTo>1</relatesTo><i> wen.lei@uwa.edu.au</i><br /><searchLink fieldCode="AR" term="%22Antoszewski%2C+J%2E%22">Antoszewski, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Faraone%2C+L%2E%22">Faraone, L.</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Sep2016, Vol. 45 Issue 9, p4596-4602. 7p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Electromagnetic+waves%22">Electromagnetic waves</searchLink><br /><searchLink fieldCode="DE" term="%22Cathode+rays%22">Cathode rays</searchLink><br /><searchLink fieldCode="DE" term="%22Ionizing+radiation%22">Ionizing radiation</searchLink><br /><searchLink fieldCode="DE" term="%22X-rays%22">X-rays</searchLink><br /><searchLink fieldCode="DE" term="%22Lattice+dynamics%22">Lattice dynamics</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Si, Ge, and GaAs have been extensively investigated as alternative substrates for molecular-beam epitaxy (MBE) growth of HgCdTe and, at present, are widely used for HgCdTe-based infrared focal-plane arrays. However, the problem of high dislocation density in HgCdTe layers grown on these lattice-mismatched substrates has yet to be resolved. In this work, we investigated another alternative substrate, GaSb, which has a significantly smaller lattice mismatch with HgCdTe in comparison with Si, Ge, and GaAs, and is readily available as large-area, epiready wafers at much lower cost in comparison with lattice-matched CdZnTe substrates. The resultant stress due to lattice and thermal mismatch between the HgCdTe epilayer and various substrates has been calculated in this work using the elasticity matrix, and the corresponding stress distribution simulated using ANSYS. The simulated structures were matched by experimental samples involving MBE growth of HgCdTe on GaAs, GaSb, and CdZnTe substrates, and were characterized via reflection high-energy electron diffraction and x-ray diffraction analysis, followed by etch pit density (EPD) analysis. In comparison with other alternative substrates, GaSb is shown to have lower interface stress and lower EPD, rendering it an interesting and promising alternative substrate material for HgCdTe epitaxy. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-016-4558-6
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 4596
    Subjects:
      – SubjectFull: Electromagnetic waves
        Type: general
      – SubjectFull: Cathode rays
        Type: general
      – SubjectFull: Ionizing radiation
        Type: general
      – SubjectFull: X-rays
        Type: general
      – SubjectFull: Lattice dynamics
        Type: general
    Titles:
      – TitleFull: Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Gu, R.
      – PersonEntity:
          Name:
            NameFull: Lei, W.
      – PersonEntity:
          Name:
            NameFull: Antoszewski, J.
      – PersonEntity:
          Name:
            NameFull: Faraone, L.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 09
              Text: Sep2016
              Type: published
              Y: 2016
          Identifiers:
            – Type: issn-print
              Value: 03615235
          Numbering:
            – Type: volume
              Value: 45
            – Type: issue
              Value: 9
          Titles:
            – TitleFull: Journal of Electronic Materials
              Type: main
ResultId 1