A novel design of ultra-broadband, high-gain and high-linearity variable gain distributed amplifier in 0.13 μm CMOS technology.
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| Title: | A novel design of ultra-broadband, high-gain and high-linearity variable gain distributed amplifier in 0.13 μm CMOS technology. |
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| Authors: | Baharvand, Zainab1, Hakimi, Ahmad2, Rashedi, Esmat1 |
| Source: | International Journal of Electronics. Dec2016, Vol. 103 Issue 12, p2075-2089. 15p. |
| Subjects: | Distributed amplifiers, Complementary metal oxide semiconductors, Ultra-wideband devices, Direct currents, Energy consumption, Voltage control |
| Abstract: | A high-gain, high-linearity and ultra-broadband variable gain distributed amplifier (VGDA) based on employing multiple techniques is presented to substantially increase the gain. The complete design is composed of two major parts including a VGDA part followed by a single stage distributed amplifier (SSDA) part. The VGDA part makes it possible to achieve different gain settings. For high gain considerations, the SSDA part cascades with the VGDA part that takes the benefits of the multiplicative gain mechanism. A theory is presented to enhance the linearity without imposing further DC power consumption. This idea has been validated by simulation results as expected. The design is analysed and simulated in the standard 0.13 μm CMOS technology. It presents the large gain tuning range of 35 dB, from –5 dB attenuation gain up to +30 dB maximum amplification gain, in relation to the control voltage (Vctr) that varies between 0.42 and 1.1 V. At the maximum amplification gain setting, it presents a DC up to 16 GHz 3 dB bandwidth, an average noise figure of 3.2 dB and an IIP3 of –2 dB m. Furthermore, it dissipates 46.42 mW from 0.7 and 0.9 V power supplies of the drain lines of VGDA and SSDA parts, respectively. Additionally, the Monte Carlo (MC) simulation has been performed to predict an estimate of the accuracy of performance of the proposed design under various conditions. [ABSTRACT FROM PUBLISHER] |
| Copyright of International Journal of Electronics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 118064429 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: A novel design of ultra-broadband, high-gain and high-linearity variable gain distributed amplifier in 0.13 μm CMOS technology. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Baharvand%2C+Zainab%22">Baharvand, Zainab</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hakimi%2C+Ahmad%22">Hakimi, Ahmad</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Rashedi%2C+Esmat%22">Rashedi, Esmat</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Electronics%22">International Journal of Electronics</searchLink>. Dec2016, Vol. 103 Issue 12, p2075-2089. 15p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Distributed+amplifiers%22">Distributed amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Ultra-wideband+devices%22">Ultra-wideband devices</searchLink><br /><searchLink fieldCode="DE" term="%22Direct+currents%22">Direct currents</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+consumption%22">Energy consumption</searchLink><br /><searchLink fieldCode="DE" term="%22Voltage+control%22">Voltage control</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: A high-gain, high-linearity and ultra-broadband variable gain distributed amplifier (VGDA) based on employing multiple techniques is presented to substantially increase the gain. The complete design is composed of two major parts including a VGDA part followed by a single stage distributed amplifier (SSDA) part. The VGDA part makes it possible to achieve different gain settings. For high gain considerations, the SSDA part cascades with the VGDA part that takes the benefits of the multiplicative gain mechanism. A theory is presented to enhance the linearity without imposing further DC power consumption. This idea has been validated by simulation results as expected. The design is analysed and simulated in the standard 0.13 μm CMOS technology. It presents the large gain tuning range of 35 dB, from –5 dB attenuation gain up to +30 dB maximum amplification gain, in relation to the control voltage (Vctr) that varies between 0.42 and 1.1 V. At the maximum amplification gain setting, it presents a DC up to 16 GHz 3 dB bandwidth, an average noise figure of 3.2 dB and an IIP3 of –2 dB m. Furthermore, it dissipates 46.42 mW from 0.7 and 0.9 V power supplies of the drain lines of VGDA and SSDA parts, respectively. Additionally, the Monte Carlo (MC) simulation has been performed to predict an estimate of the accuracy of performance of the proposed design under various conditions. [ABSTRACT FROM PUBLISHER] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of International Journal of Electronics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1080/00207217.2016.1178341 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 15 StartPage: 2075 Subjects: – SubjectFull: Distributed amplifiers Type: general – SubjectFull: Complementary metal oxide semiconductors Type: general – SubjectFull: Ultra-wideband devices Type: general – SubjectFull: Direct currents Type: general – SubjectFull: Energy consumption Type: general – SubjectFull: Voltage control Type: general Titles: – TitleFull: A novel design of ultra-broadband, high-gain and high-linearity variable gain distributed amplifier in 0.13 μm CMOS technology. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Baharvand, Zainab – PersonEntity: Name: NameFull: Hakimi, Ahmad – PersonEntity: Name: NameFull: Rashedi, Esmat IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: Dec2016 Type: published Y: 2016 Identifiers: – Type: issn-print Value: 00207217 Numbering: – Type: volume Value: 103 – Type: issue Value: 12 Titles: – TitleFull: International Journal of Electronics Type: main |
| ResultId | 1 |
