View in EDS

Role of p-NiO electron blocking layers in fabrication of (P-N):ZnO/Al:ZnO UV photodiodes.

Saved in:
Bibliographic Details
Title: Role of p-NiO electron blocking layers in fabrication of (P-N):ZnO/Al:ZnO UV photodiodes.
Authors: Amiruddin, R.1 amirphy9@yahoo.com, Santhosh Kumar, M.C.1 santhoshmc@nitt.edu
Source: Current Applied Physics. Sep2016, Vol. 16 Issue 9, p1052-1061. 10p.
Subjects: Electrons, Semiconductor diodes, X-ray photoelectron spectroscopy, Photodiodes, Photoconducting devices
Abstract: We report the fabrication and characterization of ZnO-based UV photodiodes with p-NiO as an intermediate electron blocking layer (EBL). The n-ZnO and p-ZnO layers are deposited by automated spray pyrolysis technique and NiO layers by r.f.magnetron sputtering. For the realization of p-ZnO, dual acceptor method has been adopted by doping equimolar concentration of group-V elements P and N (0.75 at%) simultaneously in ZnO. The formation of p-type characteristics in ZnO is confirmed by Hall measurement and X-ray photoelectron spectroscopy (XPS) analysis. The n-ZnO is doped with Al (3 at%) in order to improve the electrical properties. The properties of sputtered NiO layers have been investigated under three different deposition temperatures of 300 °C, 350 °C and 400 °C. By analyzing structural and electrical properties, it is revealed that NiO deposited at 350 °C possess better crystallinity and electrical properties. The optimum p-ZnO and n-ZnO layers are stacked upon ITO substrates to form ZnO-based p-n junctions. The effect of addition of NiO as an electron blocking layer (EBL) between the p-n junctions is investigated by analyzing the current density-voltage (J-V) and UV photoresponse properties. The fabricated ZnO-based UV photodiodes with NiO EBL exhibits a high photoresponsivity (R) value of 5.53 A/W with external quantum efficiency (EQE) value of 1.87 × 10 3 %. [ABSTRACT FROM AUTHOR]
Copyright of Current Applied Physics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 118102882
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Role of p-NiO electron blocking layers in fabrication of (P-N):ZnO/Al:ZnO UV photodiodes.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Amiruddin%2C+R%2E%22">Amiruddin, R.</searchLink><relatesTo>1</relatesTo><i> amirphy9@yahoo.com</i><br /><searchLink fieldCode="AR" term="%22Santhosh+Kumar%2C+M%2EC%2E%22">Santhosh Kumar, M.C.</searchLink><relatesTo>1</relatesTo><i> santhoshmc@nitt.edu</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Current+Applied+Physics%22">Current Applied Physics</searchLink>. Sep2016, Vol. 16 Issue 9, p1052-1061. 10p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Electrons%22">Electrons</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+diodes%22">Semiconductor diodes</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+photoelectron+spectroscopy%22">X-ray photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Photodiodes%22">Photodiodes</searchLink><br /><searchLink fieldCode="DE" term="%22Photoconducting+devices%22">Photoconducting devices</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: We report the fabrication and characterization of ZnO-based UV photodiodes with p-NiO as an intermediate electron blocking layer (EBL). The n-ZnO and p-ZnO layers are deposited by automated spray pyrolysis technique and NiO layers by r.f.magnetron sputtering. For the realization of p-ZnO, dual acceptor method has been adopted by doping equimolar concentration of group-V elements P and N (0.75 at%) simultaneously in ZnO. The formation of p-type characteristics in ZnO is confirmed by Hall measurement and X-ray photoelectron spectroscopy (XPS) analysis. The n-ZnO is doped with Al (3 at%) in order to improve the electrical properties. The properties of sputtered NiO layers have been investigated under three different deposition temperatures of 300 °C, 350 °C and 400 °C. By analyzing structural and electrical properties, it is revealed that NiO deposited at 350 °C possess better crystallinity and electrical properties. The optimum p-ZnO and n-ZnO layers are stacked upon ITO substrates to form ZnO-based p-n junctions. The effect of addition of NiO as an electron blocking layer (EBL) between the p-n junctions is investigated by analyzing the current density-voltage (J-V) and UV photoresponse properties. The fabricated ZnO-based UV photodiodes with NiO EBL exhibits a high photoresponsivity (R) value of 5.53 A/W with external quantum efficiency (EQE) value of 1.87 × 10 3 %. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Current Applied Physics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=118102882
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.cap.2016.06.003
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 1052
    Subjects:
      – SubjectFull: Electrons
        Type: general
      – SubjectFull: Semiconductor diodes
        Type: general
      – SubjectFull: X-ray photoelectron spectroscopy
        Type: general
      – SubjectFull: Photodiodes
        Type: general
      – SubjectFull: Photoconducting devices
        Type: general
    Titles:
      – TitleFull: Role of p-NiO electron blocking layers in fabrication of (P-N):ZnO/Al:ZnO UV photodiodes.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Amiruddin, R.
      – PersonEntity:
          Name:
            NameFull: Santhosh Kumar, M.C.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 09
              Text: Sep2016
              Type: published
              Y: 2016
          Identifiers:
            – Type: issn-print
              Value: 15671739
          Numbering:
            – Type: volume
              Value: 16
            – Type: issue
              Value: 9
          Titles:
            – TitleFull: Current Applied Physics
              Type: main
ResultId 1