Simplified process for high efficiency, self-aligned IBC c-Si solar cells combining ion implantation and epitaxial growth: Design and fabrication.
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| Title: | Simplified process for high efficiency, self-aligned IBC c-Si solar cells combining ion implantation and epitaxial growth: Design and fabrication. |
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| Authors: | Ingenito, Andrea1, Isabella, Olindo1, Zeman, Miro1 |
| Source: | Solar Energy Materials & Solar Cells. Dec2016, Vol. 157, p354-365. 12p. |
| Subjects: | Solar cell efficiency, Silicon solar cells, Epitaxy, Fabrication (Manufacturing), Semiconductor wafers |
| Abstract: | Front and rear contacted wafer-based c-Si solar cells characterized by P-diffused emitter and Al-based back surface field currently constitute the dominant solar cell architecture in the photovoltaic market. The key success of this technology is based on the simple and cost effective fabrication process. However, its conversion efficiency is limited. High-efficiency c-Si solar cells architectures have been demonstrated at laboratory and industrial scale with the aim of decreasing the levelized cost of electricity (LCOE) by increasing efficiency. For this reason, high-efficiency solar cells are expected to increase their market share in next decade. In particular, interdigitated back contacted (IBC) c-Si solar cell architecture, which the current world record efficiency is based on, is expected to gain shortly relevance at industrial level. In this work, activities at TUDelft on the fabrication of IBC c-Si solar cells are reported. In particular, a novel method for realizing high-efficiency IBC c-Si solar cells based on single-side and (relatively) low-temperature doping techniques is demonstrated. In particular, epitaxial growth of B-doped Si is used to form the emitter, while P-ion implantation is deployed to form both front and back surface fields. To pattern the rear junction, a self-aligned process based on one lithographic step has been developed. In addition, metal lift-off is used to define the metal contacts of both polarities. By using this process, efficiency higher than 20% has been demonstrated. [ABSTRACT FROM AUTHOR] |
| Copyright of Solar Energy Materials & Solar Cells is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 118152303 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Simplified process for high efficiency, self-aligned IBC c-Si solar cells combining ion implantation and epitaxial growth: Design and fabrication. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Ingenito%2C+Andrea%22">Ingenito, Andrea</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Isabella%2C+Olindo%22">Isabella, Olindo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zeman%2C+Miro%22">Zeman, Miro</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Solar+Energy+Materials+%26+Solar+Cells%22">Solar Energy Materials & Solar Cells</searchLink>. Dec2016, Vol. 157, p354-365. 12p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Solar+cell+efficiency%22">Solar cell efficiency</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+solar+cells%22">Silicon solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Fabrication+%28Manufacturing%29%22">Fabrication (Manufacturing)</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+wafers%22">Semiconductor wafers</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Front and rear contacted wafer-based c-Si solar cells characterized by P-diffused emitter and Al-based back surface field currently constitute the dominant solar cell architecture in the photovoltaic market. The key success of this technology is based on the simple and cost effective fabrication process. However, its conversion efficiency is limited. High-efficiency c-Si solar cells architectures have been demonstrated at laboratory and industrial scale with the aim of decreasing the levelized cost of electricity (LCOE) by increasing efficiency. For this reason, high-efficiency solar cells are expected to increase their market share in next decade. In particular, interdigitated back contacted (IBC) c-Si solar cell architecture, which the current world record efficiency is based on, is expected to gain shortly relevance at industrial level. In this work, activities at TUDelft on the fabrication of IBC c-Si solar cells are reported. In particular, a novel method for realizing high-efficiency IBC c-Si solar cells based on single-side and (relatively) low-temperature doping techniques is demonstrated. In particular, epitaxial growth of B-doped Si is used to form the emitter, while P-ion implantation is deployed to form both front and back surface fields. To pattern the rear junction, a self-aligned process based on one lithographic step has been developed. In addition, metal lift-off is used to define the metal contacts of both polarities. By using this process, efficiency higher than 20% has been demonstrated. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Solar Energy Materials & Solar Cells is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.solmat.2016.05.021 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 12 StartPage: 354 Subjects: – SubjectFull: Solar cell efficiency Type: general – SubjectFull: Silicon solar cells Type: general – SubjectFull: Epitaxy Type: general – SubjectFull: Fabrication (Manufacturing) Type: general – SubjectFull: Semiconductor wafers Type: general Titles: – TitleFull: Simplified process for high efficiency, self-aligned IBC c-Si solar cells combining ion implantation and epitaxial growth: Design and fabrication. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Ingenito, Andrea – PersonEntity: Name: NameFull: Isabella, Olindo – PersonEntity: Name: NameFull: Zeman, Miro IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: Dec2016 Type: published Y: 2016 Identifiers: – Type: issn-print Value: 09270248 Numbering: – Type: volume Value: 157 Titles: – TitleFull: Solar Energy Materials & Solar Cells Type: main |
| ResultId | 1 |
