Self-compliance multilevel storage characteristic in HfO2-based device.
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| Title: | Self-compliance multilevel storage characteristic in HfO2-based device. |
|---|---|
| Authors: | Xiao-Ping Gao1, Li-Ping Fu2, Chuan-Bing Chen3, Peng Yuan3, Ying-Tao Li3,4 li_yt06@lzu.edu.cn |
| Source: | Chinese Physics B. Oct2016, Vol. 25 Issue 10, p1-1. 1p. |
| Subjects: | Hafnium oxide, Multilevel models, Switching theory, Electric potential, Computer storage devices |
| Abstract: | In this paper, the self-compliance bipolar resistive switching characteristic of an HfO2-based memory device with Ag/HfO2/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s, which may be useful for the applications in nonvolatile multilevel storage. [ABSTRACT FROM AUTHOR] |
| Copyright of Chinese Physics B is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 118317746 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Self-compliance multilevel storage characteristic in HfO2-based device. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Xiao-Ping+Gao%22">Xiao-Ping Gao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Li-Ping+Fu%22">Li-Ping Fu</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Chuan-Bing+Chen%22">Chuan-Bing Chen</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Peng+Yuan%22">Peng Yuan</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Ying-Tao+Li%22">Ying-Tao Li</searchLink><relatesTo>3,4</relatesTo><i> li_yt06@lzu.edu.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Chinese+Physics+B%22">Chinese Physics B</searchLink>. Oct2016, Vol. 25 Issue 10, p1-1. 1p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Hafnium+oxide%22">Hafnium oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Multilevel+models%22">Multilevel models</searchLink><br /><searchLink fieldCode="DE" term="%22Switching+theory%22">Switching theory</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+potential%22">Electric potential</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+storage+devices%22">Computer storage devices</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this paper, the self-compliance bipolar resistive switching characteristic of an HfO2-based memory device with Ag/HfO2/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s, which may be useful for the applications in nonvolatile multilevel storage. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Chinese Physics B is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1088/1674-1056/25/10/106102 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 1 StartPage: 1 Subjects: – SubjectFull: Hafnium oxide Type: general – SubjectFull: Multilevel models Type: general – SubjectFull: Switching theory Type: general – SubjectFull: Electric potential Type: general – SubjectFull: Computer storage devices Type: general Titles: – TitleFull: Self-compliance multilevel storage characteristic in HfO2-based device. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Xiao-Ping Gao – PersonEntity: Name: NameFull: Li-Ping Fu – PersonEntity: Name: NameFull: Chuan-Bing Chen – PersonEntity: Name: NameFull: Peng Yuan – PersonEntity: Name: NameFull: Ying-Tao Li IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 10 Text: Oct2016 Type: published Y: 2016 Identifiers: – Type: issn-print Value: 16741056 Numbering: – Type: volume Value: 25 – Type: issue Value: 10 Titles: – TitleFull: Chinese Physics B Type: main |
| ResultId | 1 |
