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Polar Second-Harmonic Imaging to Resolve Pure and Mixed Crystal Phases along GaAs Nanowires.

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Title: Polar Second-Harmonic Imaging to Resolve Pure and Mixed Crystal Phases along GaAs Nanowires.
Authors: Timofeeva, Maria1,2 mtimo@phys.ethz.ch, Bouravleuv, Alexei3,4, Cirlin, George2,3,4, Shtrom, Igor3,4, Soshnikov, Ilya3,4, Reig Escalé, Marc1, Sergeyev, Anton1, Grange, Rachel1 grange@phys.ethz.ch
Source: Nano Letters. Oct2016, Vol. 16 Issue 10, p6290-6297. 8p.
Subjects: Mixed crystals, Electric properties of gallium arsenide, Nanowires, Polarization (Electricity), Crystal structure
Abstract: In this work, we report an optical method for characterizing crystal phases along single-semiconductor III-V nanowires based on the measurement of polarization-dependent second-harmonic generation. This powerful imaging method is based on a per-pixel analysis of the second-harmonic-generated signal on the incoming excitation polarization. The dependence of the second-harmonic generation responses on the nonlinear second-order susceptibility tensor allows the distinguishing of areas of pure wurtzite, zinc blende, and mixed and rotational twins crystal structures in individual nanowires. With a far-field nonlinear optical microscope, we recorded the second-harmonic generation in GaAs nanowires and precisely determined their various crystal structures by analyzing the polar response for each pixel of the images. The predicted crystal phases in GaAs nanowire are confirmed with scanning transmission electron and high-resolution transmission electron measurements. The developed method of analyzing the nonlinear polar response of each pixel can be used for an investigation of nanowire crystal structure that is quick, sensitive to structural transitions, nondestructive, and on-the-spot. It can be applied for the crystal phase characterization of nanowires built into optoelectronic devices in which electron microscopy cannot be performed (for example, in lab-on-a-chip devices). Moreover, this method is not limited to GaAs nanowires but can be used for other nonlinear optical nanostructures. [ABSTRACT FROM AUTHOR]
Copyright of Nano Letters is the property of American Chemical Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Polar Second-Harmonic Imaging to Resolve Pure and Mixed Crystal Phases along GaAs Nanowires.
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  Data: <searchLink fieldCode="AR" term="%22Timofeeva%2C+Maria%22">Timofeeva, Maria</searchLink><relatesTo>1,2</relatesTo><i> mtimo@phys.ethz.ch</i><br /><searchLink fieldCode="AR" term="%22Bouravleuv%2C+Alexei%22">Bouravleuv, Alexei</searchLink><relatesTo>3,4</relatesTo><br /><searchLink fieldCode="AR" term="%22Cirlin%2C+George%22">Cirlin, George</searchLink><relatesTo>2,3,4</relatesTo><br /><searchLink fieldCode="AR" term="%22Shtrom%2C+Igor%22">Shtrom, Igor</searchLink><relatesTo>3,4</relatesTo><br /><searchLink fieldCode="AR" term="%22Soshnikov%2C+Ilya%22">Soshnikov, Ilya</searchLink><relatesTo>3,4</relatesTo><br /><searchLink fieldCode="AR" term="%22Reig+Escalé%2C+Marc%22">Reig Escalé, Marc</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Sergeyev%2C+Anton%22">Sergeyev, Anton</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Grange%2C+Rachel%22">Grange, Rachel</searchLink><relatesTo>1</relatesTo><i> grange@phys.ethz.ch</i>
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  Data: <searchLink fieldCode="JN" term="%22Nano+Letters%22">Nano Letters</searchLink>. Oct2016, Vol. 16 Issue 10, p6290-6297. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Mixed+crystals%22">Mixed crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+properties+of+gallium+arsenide%22">Electric properties of gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Nanowires%22">Nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Polarization+%28Electricity%29%22">Polarization (Electricity)</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+structure%22">Crystal structure</searchLink>
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  Data: In this work, we report an optical method for characterizing crystal phases along single-semiconductor III-V nanowires based on the measurement of polarization-dependent second-harmonic generation. This powerful imaging method is based on a per-pixel analysis of the second-harmonic-generated signal on the incoming excitation polarization. The dependence of the second-harmonic generation responses on the nonlinear second-order susceptibility tensor allows the distinguishing of areas of pure wurtzite, zinc blende, and mixed and rotational twins crystal structures in individual nanowires. With a far-field nonlinear optical microscope, we recorded the second-harmonic generation in GaAs nanowires and precisely determined their various crystal structures by analyzing the polar response for each pixel of the images. The predicted crystal phases in GaAs nanowire are confirmed with scanning transmission electron and high-resolution transmission electron measurements. The developed method of analyzing the nonlinear polar response of each pixel can be used for an investigation of nanowire crystal structure that is quick, sensitive to structural transitions, nondestructive, and on-the-spot. It can be applied for the crystal phase characterization of nanowires built into optoelectronic devices in which electron microscopy cannot be performed (for example, in lab-on-a-chip devices). Moreover, this method is not limited to GaAs nanowires but can be used for other nonlinear optical nanostructures. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Nano Letters is the property of American Chemical Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1021/acs.nanolett.6b02592
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      – SubjectFull: Electric properties of gallium arsenide
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      – SubjectFull: Polarization (Electricity)
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              Text: Oct2016
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