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Semiconducting Properties of Swift Au Ion-Irradiated ZnO Thin Films at Room Temperature.

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Title: Semiconducting Properties of Swift Au Ion-Irradiated ZnO Thin Films at Room Temperature.
Authors: Kwon, Sera1, Park, Hyun-Woo1, Chung, Kwun-Bum1 kbchung@dongguk.edu
Source: Journal of Electronic Materials. Feb2017, Vol. 46 Issue 2, p1210-1214. 5p.
Subjects: Semiconductor films, Semiconductor characterization, Gold, Zinc oxide films, Irradiation, Ions
Abstract: The semiconducting properties of Au ion-irradiated ZnO thin films were investigated as a function of ion irradiation dose at room temperature. The Au ion irradiation was conducted with acceleration energy of 130 MeV in the ion dose range from 1 × 10 to 5 × 10 ions/cm. The physical properties showed no change regardless of the Au ion irradiation dose; however, the electrical properties of Au ion-irradiated ZnO thin films changed, depending on the Au ion irradiation dose. The electronic structure drastically changed with the evolution of hybridized molecular orbital structure for the conduction band and band edge states below the conduction band. These remarkable changes in electronic structure correlate with changes in electrical properties, such as carrier concentration and mobility. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 120690841
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PubType: Academic Journal
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  Data: Semiconducting Properties of Swift Au Ion-Irradiated ZnO Thin Films at Room Temperature.
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  Data: <searchLink fieldCode="AR" term="%22Kwon%2C+Sera%22">Kwon, Sera</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Park%2C+Hyun-Woo%22">Park, Hyun-Woo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chung%2C+Kwun-Bum%22">Chung, Kwun-Bum</searchLink><relatesTo>1</relatesTo><i> kbchung@dongguk.edu</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Feb2017, Vol. 46 Issue 2, p1210-1214. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Semiconductor+films%22">Semiconductor films</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+characterization%22">Semiconductor characterization</searchLink><br /><searchLink fieldCode="DE" term="%22Gold%22">Gold</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide+films%22">Zinc oxide films</searchLink><br /><searchLink fieldCode="DE" term="%22Irradiation%22">Irradiation</searchLink><br /><searchLink fieldCode="DE" term="%22Ions%22">Ions</searchLink>
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  Label: Abstract
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  Data: The semiconducting properties of Au ion-irradiated ZnO thin films were investigated as a function of ion irradiation dose at room temperature. The Au ion irradiation was conducted with acceleration energy of 130 MeV in the ion dose range from 1 × 10 to 5 × 10 ions/cm. The physical properties showed no change regardless of the Au ion irradiation dose; however, the electrical properties of Au ion-irradiated ZnO thin films changed, depending on the Au ion irradiation dose. The electronic structure drastically changed with the evolution of hybridized molecular orbital structure for the conduction band and band edge states below the conduction band. These remarkable changes in electronic structure correlate with changes in electrical properties, such as carrier concentration and mobility. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s11664-016-5105-1
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        Text: English
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      – SubjectFull: Semiconductor characterization
        Type: general
      – SubjectFull: Gold
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      – SubjectFull: Zinc oxide films
        Type: general
      – SubjectFull: Irradiation
        Type: general
      – SubjectFull: Ions
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      – TitleFull: Semiconducting Properties of Swift Au Ion-Irradiated ZnO Thin Films at Room Temperature.
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              Text: Feb2017
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