Bibliographic Details
| Title: |
Neutron-induced modifications on Hostaphan and Makrofol wettability and etching behaviors. |
| Authors: |
El-Sayed, D.1, El-Saftawy, A.A.2 aama1978@yahoo.com, Abd El Aal, S.A.3, Fayez-Hassan, M.4, Al-Abyad, M.1, Mansour, N.A.5, Seddik, U.4 |
| Source: |
Radiation Physics & Chemistry. Apr2017, Vol. 133, p9-20. 12p. |
| Subjects: |
Wetting, Nuclear counters, Thermal neutrons, Surface energy, Activation energy |
| Abstract: |
Understanding the nature of polymers used as nuclear detectors is crucial to enhance their behaviors. In this work, the induced modifications in wettability and etching properties of Hostaphan and Makrofol polymers irradiated by different fluences of thermal neutrons are investigated. The wetting properties are studied by contact angle technique which showed the spread out of various liquids over the irradiated polymers surfaces (wettability enhanced). This wetting behavior is attributed to the induced changes in surface free energy (SFE), morphology, roughness, structure, hardness, and chemistry. SFE values are calculated by three different models and found to increase after neutrons irradiation associated with differences depending on the used model. These differences result from the intermolecular interactions in the liquid/polymer system. Surface morphology and roughness of both polymers showed drastic changes after irradiation. Additionally, surface structure and hardness of pristine and irradiated polymers were discussed and correlated to the surface wettability improvements. The changes in surface chemistry are examined by Fourier transform infrared spectroscopy (FTIR), which indicate an increase in surface polarity due to the formation of polar groups. The irradiated polymers etching characteristics and activation energies are discussed as well. Lastly, it is evident that thermal neutrons show efficiency in improving surface wettability and etching properties of Hostaphan and Makrofol in a controlled way. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |