Bibliographic Details
| Title: |
Temperature dependent fracture initiation in microscale silicon. |
| Authors: |
Hintsala, Eric D.1,2 ehintsala@hysitron.com, Bhowmick, Sanjit1, Yueyue, Xie3, Ballarini, Roberto3, Asif, S. A. Syed1, Gerberich, William W.2 |
| Source: |
Scripta Materialia. Mar2017, Vol. 130, p78-82. 5p. |
| Subjects: |
Silicon, Metal fractures, Temperature measurements, Scanning electron microscopes, Dislocations in metals |
| Abstract: |
We present novel in-situ scanning electron microscope experiments exploring the fracture of silicon as a function of temperature at the microscale, from room temperature to 600 °C. Clear post mortem TEM observations of dislocation activity at and above 450 °C suggest that back stresses from crack-tip dislocation emission raise the applied stress intensity at initiation, as part of a brittle to ductile transition starting at 300 °C. This is in agreement with other microscale measurements; however, these experiments are particularly noteworthy in their ability to directly observe crack advance and perform post-mortem analysis to investigate dislocation activity. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
