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Temperature dependent fracture initiation in microscale silicon.

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Title: Temperature dependent fracture initiation in microscale silicon.
Authors: Hintsala, Eric D.1,2 ehintsala@hysitron.com, Bhowmick, Sanjit1, Yueyue, Xie3, Ballarini, Roberto3, Asif, S. A. Syed1, Gerberich, William W.2
Source: Scripta Materialia. Mar2017, Vol. 130, p78-82. 5p.
Subjects: Silicon, Metal fractures, Temperature measurements, Scanning electron microscopes, Dislocations in metals
Abstract: We present novel in-situ scanning electron microscope experiments exploring the fracture of silicon as a function of temperature at the microscale, from room temperature to 600 °C. Clear post mortem TEM observations of dislocation activity at and above 450 °C suggest that back stresses from crack-tip dislocation emission raise the applied stress intensity at initiation, as part of a brittle to ductile transition starting at 300 °C. This is in agreement with other microscale measurements; however, these experiments are particularly noteworthy in their ability to directly observe crack advance and perform post-mortem analysis to investigate dislocation activity. [ABSTRACT FROM AUTHOR]
Copyright of Scripta Materialia is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 120951691
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+fractures%22">Metal fractures</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+measurements%22">Temperature measurements</searchLink><br /><searchLink fieldCode="DE" term="%22Scanning+electron+microscopes%22">Scanning electron microscopes</searchLink><br /><searchLink fieldCode="DE" term="%22Dislocations+in+metals%22">Dislocations in metals</searchLink>
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  Data: We present novel in-situ scanning electron microscope experiments exploring the fracture of silicon as a function of temperature at the microscale, from room temperature to 600 °C. Clear post mortem TEM observations of dislocation activity at and above 450 °C suggest that back stresses from crack-tip dislocation emission raise the applied stress intensity at initiation, as part of a brittle to ductile transition starting at 300 °C. This is in agreement with other microscale measurements; however, these experiments are particularly noteworthy in their ability to directly observe crack advance and perform post-mortem analysis to investigate dislocation activity. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Scripta Materialia is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.scriptamat.2016.11.016
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        Text: English
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        Type: general
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      – SubjectFull: Temperature measurements
        Type: general
      – SubjectFull: Scanning electron microscopes
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              Text: Mar2017
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