Influence of isomorphous substitution of metal ion on the low-frequency dielectric dispersion in NH 2 (CH 3 ) 2 Al 1− x Cr x (SO 4 ) 2 ⋅6H 2 O ferroelectrics.

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Title: Influence of isomorphous substitution of metal ion on the low-frequency dielectric dispersion in NH 2 (CH 3 ) 2 Al 1− x Cr x (SO 4 ) 2 ⋅6H 2 O ferroelectrics.
Authors: Kapustianyk, V.1,2 (AUTHOR) kapustianyk@yahoo.co.uk, Eliyashevskyy, Yu.2 (AUTHOR), Czapla, Z.3,4 (AUTHOR), Dacko, S.3 (AUTHOR), Rudyk, V.1 (AUTHOR), Sereda, S.2 (AUTHOR), Ostapenko, N.2 (AUTHOR)
Source: Phase Transitions. Feb2017, Vol. 90 Issue 2, p175-188. 14p.
Subjects: Isomorphous structures, Substitution reactions, Metal ions, Dielectric materials, Ferroelectric materials
Abstract: This paper is devoted to the study of the influence of metal ion isomorphous substitution on the ferroelastic-ferroelectric phase transition and dispersion caused by the motion of domain walls in dimethylammonium metal sulfate hexahydrate DMAAl1−xCrxS ferroelectric crystals (x= 0, 0.065, 0.2). It is shown that such a substitution significantly changes the phase transition temperature and parameters of the dielectric dispersion. These changes are explained in terms of interaction between the metal-hydrate complexes and DMA groups that carry the dipole moment and due to this they are responsible for the phase transitions and motion of the domain walls. [ABSTRACT FROM AUTHOR]
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Abstract:This paper is devoted to the study of the influence of metal ion isomorphous substitution on the ferroelastic-ferroelectric phase transition and dispersion caused by the motion of domain walls in dimethylammonium metal sulfate hexahydrate DMAAl1−xCrxS ferroelectric crystals (x= 0, 0.065, 0.2). It is shown that such a substitution significantly changes the phase transition temperature and parameters of the dielectric dispersion. These changes are explained in terms of interaction between the metal-hydrate complexes and DMA groups that carry the dipole moment and due to this they are responsible for the phase transitions and motion of the domain walls. [ABSTRACT FROM AUTHOR]
ISSN:01411594
DOI:10.1080/01411594.2016.1170126