Some properties of single-crystal boron carbide

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Title: Some properties of single-crystal boron carbide
Authors: Werheit, H.1 h.werheit@uni-duisburg.de, Leithe-Jasper, A.2, Tanaka, T.2, Rotter, H.W.3, Schwetz, K.A.4
Source: Journal of Solid State Chemistry. Feb2004, Vol. 177 Issue 2, p575. 5p.
Subjects: Crystals, Hardness, Boron compounds, Carbides
Abstract: Large and high-quality floating zone grown single crystals of boron carbide of the composition B∼4.3C corresponding to the carbon-rich limit B4.3C of the homogeneity range, were presented by Leithe-Jasper and Tanaka at the ISBB’99 in Dinard for the first time. Such crystals now allow determining the physical properties of this refractory semiconductor free from the influence of impurities or coarse structural imperfections. Some solid-state properties of these single crystals like electronic transport properties, IR optical absorption spectrum, IR reflectivity spectrum, FT-Raman spectrum, and Knoop hardness are presented and discussed with respect to the properties of less perfect boron carbide previously determined. Outstanding properties are the hardness exceeding that of technical boron carbide by 14% (∥c) and 24% (⊥c) respectively, and the high optical absorption at energies below the absorption edge and the reflectivity strongly increasing towards low frequencies suggesting a destinctly higher contribution of free carriers. [Copyright &y& Elsevier]
Copyright of Journal of Solid State Chemistry is the property of Academic Press Inc. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Large and high-quality floating zone grown single crystals of boron carbide of the composition B∼4.3C corresponding to the carbon-rich limit B4.3C of the homogeneity range, were presented by Leithe-Jasper and Tanaka at the ISBB’99 in Dinard for the first time. Such crystals now allow determining the physical properties of this refractory semiconductor free from the influence of impurities or coarse structural imperfections. Some solid-state properties of these single crystals like electronic transport properties, IR optical absorption spectrum, IR reflectivity spectrum, FT-Raman spectrum, and Knoop hardness are presented and discussed with respect to the properties of less perfect boron carbide previously determined. Outstanding properties are the hardness exceeding that of technical boron carbide by 14% (∥c) and 24% (⊥c) respectively, and the high optical absorption at energies below the absorption edge and the reflectivity strongly increasing towards low frequencies suggesting a destinctly higher contribution of free carriers. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
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  Group: Ab
  Data: <i>Copyright of Journal of Solid State Chemistry is the property of Academic Press Inc. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.jssc.2003.04.005
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 575
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      – SubjectFull: Crystals
        Type: general
      – SubjectFull: Hardness
        Type: general
      – SubjectFull: Boron compounds
        Type: general
      – SubjectFull: Carbides
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      – TitleFull: Some properties of single-crystal boron carbide
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            NameFull: Tanaka, T.
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            NameFull: Rotter, H.W.
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            NameFull: Schwetz, K.A.
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              M: 02
              Text: Feb2004
              Type: published
              Y: 2004
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              Value: 177
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