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Investigation of irradiated monolithic transistors for space applications

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Title: Investigation of irradiated monolithic transistors for space applications
Authors: Codegoni, D.1, Colder, A.2, Croitoru, N.1,3, D’Angelo, P.1, DeMarchi, M.1,4, Fallica, G.5, Favalli, A.1, Leonardi, S.5, Levalois, M.2, Marie, P.2, Modica, R.5, Rancoita, P.G.1 piergiorgio.rancoita@mib.infn.it, Seidman, A.1,3
Source: Nuclear Instruments & Methods in Physics Research Section B. Mar2004, Vol. 217 Issue 1, p65. 12p.
Subjects: Astrophysical radiation, Electronics, Neutrons, Bipolar transistors
Abstract: In this paper experimental results on radiation effects on a BICMOS high speed commercial technology, manufactured by STMicroelectronics, are reported. Bipolar transistors were irradiated by neutrons, ions, or by both of them. Fast neutrons, as well as other types of particles, produce defects, mainly by displacing silicon atoms from their lattice positions to interstitial locations, i.e. generating vacancy-interstitial pairs, the so-called Frenkel pairs (FP). Defects introduce trapping energy states which degrade the common emitter current gain β. The gain degradation has been investigated for collector current Ic between 1 μA and 1 mA. It was found a linear dependence of Δ(1/β)=1/βi−1/β (where βi and β are the gain after and before the irradiation) as a function of the concentration of FP. The bipolar transistors made on this technology have shown to be particularly radiation resistant. Both base and collector currents have been also systematically investigated. [Copyright &y& Elsevier]
Copyright of Nuclear Instruments & Methods in Physics Research Section B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 12236727
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Investigation of irradiated monolithic transistors for space applications
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  Data: <searchLink fieldCode="AR" term="%22Codegoni%2C+D%2E%22">Codegoni, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Colder%2C+A%2E%22">Colder, A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Croitoru%2C+N%2E%22">Croitoru, N.</searchLink><relatesTo>1,3</relatesTo><br /><searchLink fieldCode="AR" term="%22D’Angelo%2C+P%2E%22">D’Angelo, P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22DeMarchi%2C+M%2E%22">DeMarchi, M.</searchLink><relatesTo>1,4</relatesTo><br /><searchLink fieldCode="AR" term="%22Fallica%2C+G%2E%22">Fallica, G.</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AR" term="%22Favalli%2C+A%2E%22">Favalli, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Leonardi%2C+S%2E%22">Leonardi, S.</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AR" term="%22Levalois%2C+M%2E%22">Levalois, M.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Marie%2C+P%2E%22">Marie, P.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Modica%2C+R%2E%22">Modica, R.</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AR" term="%22Rancoita%2C+P%2EG%2E%22">Rancoita, P.G.</searchLink><relatesTo>1</relatesTo><i> piergiorgio.rancoita@mib.infn.it</i><br /><searchLink fieldCode="AR" term="%22Seidman%2C+A%2E%22">Seidman, A.</searchLink><relatesTo>1,3</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Nuclear+Instruments+%26+Methods+in+Physics+Research+Section+B%22">Nuclear Instruments & Methods in Physics Research Section B</searchLink>. Mar2004, Vol. 217 Issue 1, p65. 12p.
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  Data: <searchLink fieldCode="DE" term="%22Astrophysical+radiation%22">Astrophysical radiation</searchLink><br /><searchLink fieldCode="DE" term="%22Electronics%22">Electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Neutrons%22">Neutrons</searchLink><br /><searchLink fieldCode="DE" term="%22Bipolar+transistors%22">Bipolar transistors</searchLink>
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  Data: In this paper experimental results on radiation effects on a BICMOS high speed commercial technology, manufactured by STMicroelectronics, are reported. Bipolar transistors were irradiated by neutrons, ions, or by both of them. Fast neutrons, as well as other types of particles, produce defects, mainly by displacing silicon atoms from their lattice positions to interstitial locations, i.e. generating vacancy-interstitial pairs, the so-called Frenkel pairs (FP). Defects introduce trapping energy states which degrade the common emitter current gain <f>β</f>. The gain degradation has been investigated for collector current <f>Ic</f> between 1 μA and 1 mA. It was found a linear dependence of <f>Δ(1/β)=1/βi−1/β</f> (where <f>βi</f> and <f>β</f> are the gain after and before the irradiation) as a function of the concentration of FP. The bipolar transistors made on this technology have shown to be particularly radiation resistant. Both base and collector currents have been also systematically investigated. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Nuclear Instruments & Methods in Physics Research Section B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.nimb.2003.08.044
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      – SubjectFull: Electronics
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              Text: Mar2004
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