Synthesis of CuFeSnS thin films with stannite and wurtzite structure directly on glass substrates via the solvothermal method.
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| Title: | Synthesis of CuFeSnS thin films with stannite and wurtzite structure directly on glass substrates via the solvothermal method. |
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| Authors: | Hou, Haijun1, Guan, Hao1, Li, Lei1 |
| Source: | Journal of Materials Science: Materials in Electronics. Jun2017, Vol. 28 Issue 11, p7745-7748. 4p. |
| Subjects: | Thin films, Stannite, Wurtzite, X-ray diffraction, Raman spectroscopy |
| Abstract: | Stannite and wurtzite CuFeSnS (CFTS) thin films were synthesized directly on glass substrates via the solvothermal method firstly. The solvent plays an important role in the formation and morphologies of two different CFTS phases. X-ray diffraction, Raman spectroscopy, scanning electron microscopy, UV-Vis-NIR absorbance spectroscopy measurement and Hall effect measurement show that the surface of stannite CFTS thin film is covered with large numbers of irregular particles while wurtzite CFTS thin film exhibits sphere-like particles. The stannite and wurtzite CFTS thin films show that the carrier concerntration is in the range of 10cm and carrier mobility of about 4.602-21.98 cm v s. The band gaps of stannite and wurtzite CFTS thin films are determined to 1.3 and 1.34 eV, repectively, which are suitable as a substitute for thin film solar cells. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Items | – Name: Title Label: Title Group: Ti Data: Synthesis of CuFeSnS thin films with stannite and wurtzite structure directly on glass substrates via the solvothermal method. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Hou%2C+Haijun%22">Hou, Haijun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Guan%2C+Hao%22">Guan, Hao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Li%2C+Lei%22">Li, Lei</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Jun2017, Vol. 28 Issue 11, p7745-7748. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Stannite%22">Stannite</searchLink><br /><searchLink fieldCode="DE" term="%22Wurtzite%22">Wurtzite</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+diffraction%22">X-ray diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Stannite and wurtzite CuFeSnS (CFTS) thin films were synthesized directly on glass substrates via the solvothermal method firstly. The solvent plays an important role in the formation and morphologies of two different CFTS phases. X-ray diffraction, Raman spectroscopy, scanning electron microscopy, UV-Vis-NIR absorbance spectroscopy measurement and Hall effect measurement show that the surface of stannite CFTS thin film is covered with large numbers of irregular particles while wurtzite CFTS thin film exhibits sphere-like particles. The stannite and wurtzite CFTS thin films show that the carrier concerntration is in the range of 10cm and carrier mobility of about 4.602-21.98 cm v s. The band gaps of stannite and wurtzite CFTS thin films are determined to 1.3 and 1.34 eV, repectively, which are suitable as a substitute for thin film solar cells. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-017-6469-6 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 7745 Subjects: – SubjectFull: Thin films Type: general – SubjectFull: Stannite Type: general – SubjectFull: Wurtzite Type: general – SubjectFull: X-ray diffraction Type: general – SubjectFull: Raman spectroscopy Type: general Titles: – TitleFull: Synthesis of CuFeSnS thin films with stannite and wurtzite structure directly on glass substrates via the solvothermal method. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Hou, Haijun – PersonEntity: Name: NameFull: Guan, Hao – PersonEntity: Name: NameFull: Li, Lei IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun2017 Type: published Y: 2017 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 28 – Type: issue Value: 11 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
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