Current Starving the SRAM Cell: A Strategy to Improve Cell Stability and Power.
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| Title: | Current Starving the SRAM Cell: A Strategy to Improve Cell Stability and Power. |
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| Authors: | Nayak, Debasish1 nayak.debashis84@gmail.com, Acharya, Debiprasad2 d_p_acharya@rediffmail.com, Mahapatra, Kamalakanta2 kkm@nitrkl.ac.in |
| Source: | Circuits, Systems & Signal Processing. Aug2017, Vol. 36 Issue 8, p3047-3070. 24p. |
| Subjects: | Static random access memory chips, Energy consumption, Short circuits, Electric transformers, Algorithms |
| Abstract: | In SRAM cell design, the energy consumption and cell stability are the major performance indices which need to be improved. Several techniques reported earlier attempt to improve either of the stability or the energy consumption. In this paper, a scheme is proposed which uses current starving on conventional SRAM cell to improve cell stability and also to reduce energy consumption. Unlike separating the read and write port of the SRAM cell in most of the techniques proposed earlier, this technique results more ideal voltage transfer characteristic of the cross-coupled inverter leading to larger noise margin. It also reduces the dynamic energy consumption through short circuit current reduction during state transition. The proposed technique is compared with NC-SRAM [3], IWLVC-SRAM [18], 10T-SRAM [16] and a conventional 6T-SRAM cell. The read and retention stability of the current starving SRAM (CS-SRAM) cell increases by 31 and 41%, respectively, with respect to the 6T-RAM cell. These two SNMs are also significantly higher than the other compared cells. The proposed technique consumes 22% lesser energy in comparison with the 6T-SRAM. The energy consumption is also reduced in comparison with the other compared cells. The compared cells are designed both in CMOS process and in FinFET technology (20 nm PTM library). The performance enhancement of the proposed cell maintains same trend in both technologies. [ABSTRACT FROM AUTHOR] |
| Copyright of Circuits, Systems & Signal Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 123385875 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Current Starving the SRAM Cell: A Strategy to Improve Cell Stability and Power. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Nayak%2C+Debasish%22">Nayak, Debasish</searchLink><relatesTo>1</relatesTo><i> nayak.debashis84@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Acharya%2C+Debiprasad%22">Acharya, Debiprasad</searchLink><relatesTo>2</relatesTo><i> d_p_acharya@rediffmail.com</i><br /><searchLink fieldCode="AR" term="%22Mahapatra%2C+Kamalakanta%22">Mahapatra, Kamalakanta</searchLink><relatesTo>2</relatesTo><i> kkm@nitrkl.ac.in</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Circuits%2C+Systems+%26+Signal+Processing%22">Circuits, Systems & Signal Processing</searchLink>. Aug2017, Vol. 36 Issue 8, p3047-3070. 24p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Static+random+access+memory+chips%22">Static random access memory chips</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+consumption%22">Energy consumption</searchLink><br /><searchLink fieldCode="DE" term="%22Short+circuits%22">Short circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+transformers%22">Electric transformers</searchLink><br /><searchLink fieldCode="DE" term="%22Algorithms%22">Algorithms</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In SRAM cell design, the energy consumption and cell stability are the major performance indices which need to be improved. Several techniques reported earlier attempt to improve either of the stability or the energy consumption. In this paper, a scheme is proposed which uses current starving on conventional SRAM cell to improve cell stability and also to reduce energy consumption. Unlike separating the read and write port of the SRAM cell in most of the techniques proposed earlier, this technique results more ideal voltage transfer characteristic of the cross-coupled inverter leading to larger noise margin. It also reduces the dynamic energy consumption through short circuit current reduction during state transition. The proposed technique is compared with NC-SRAM [3], IWLVC-SRAM [18], 10T-SRAM [16] and a conventional 6T-SRAM cell. The read and retention stability of the current starving SRAM (CS-SRAM) cell increases by 31 and 41%, respectively, with respect to the 6T-RAM cell. These two SNMs are also significantly higher than the other compared cells. The proposed technique consumes 22% lesser energy in comparison with the 6T-SRAM. The energy consumption is also reduced in comparison with the other compared cells. The compared cells are designed both in CMOS process and in FinFET technology (20 nm PTM library). The performance enhancement of the proposed cell maintains same trend in both technologies. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Circuits, Systems & Signal Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s00034-016-0466-5 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 24 StartPage: 3047 Subjects: – SubjectFull: Static random access memory chips Type: general – SubjectFull: Energy consumption Type: general – SubjectFull: Short circuits Type: general – SubjectFull: Electric transformers Type: general – SubjectFull: Algorithms Type: general Titles: – TitleFull: Current Starving the SRAM Cell: A Strategy to Improve Cell Stability and Power. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Nayak, Debasish – PersonEntity: Name: NameFull: Acharya, Debiprasad – PersonEntity: Name: NameFull: Mahapatra, Kamalakanta IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2017 Type: published Y: 2017 Identifiers: – Type: issn-print Value: 0278081X Numbering: – Type: volume Value: 36 – Type: issue Value: 8 Titles: – TitleFull: Circuits, Systems & Signal Processing Type: main |
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