Design of low-power wideband frequency quadruplers based on transformer-coupled resonators for E-Band backhaul applications.
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| Title: | Design of low-power wideband frequency quadruplers based on transformer-coupled resonators for E-Band backhaul applications. |
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| Authors: | Iotti, Lorenzo1, Bassi, Matteo1, Mazzanti, Andrea1, Svelto, Francesco1 |
| Source: | Integration: The VLSI Journal. Jun2017, Vol. 58, p413-420. 8p. |
| Subjects: | BiCMOS memory circuits, Electronic band structure, Electric resonators, Transformer insulation, Bandwidth allocation |
| Abstract: | This paper presents a mm-wave two-stage push-push BiCMOS frequency quadrupler for E-band wireless backhaul applications. To enhance gain-bandwidth product and overcome the limitations of classic push-push pairs, coupled resonators realized through low-k transformers are employed. A novel transformer layout is proposed for single-ended to differential conversion to achieve superior suppression of differential mismatches and enhanced gain. The measured prototype, fabricated in 55 nm BiCMOS technology, achieves a remarkable 27% fractional bandwidth around the center frequency of 74 GHz with a power consumption of 7 mW only. [ABSTRACT FROM AUTHOR] |
| Copyright of Integration: The VLSI Journal is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 123628796 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Design of low-power wideband frequency quadruplers based on transformer-coupled resonators for E-Band backhaul applications. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Iotti%2C+Lorenzo%22">Iotti, Lorenzo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Bassi%2C+Matteo%22">Bassi, Matteo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Mazzanti%2C+Andrea%22">Mazzanti, Andrea</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Svelto%2C+Francesco%22">Svelto, Francesco</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Integration%3A+The+VLSI+Journal%22">Integration: The VLSI Journal</searchLink>. Jun2017, Vol. 58, p413-420. 8p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22BiCMOS+memory+circuits%22">BiCMOS memory circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+band+structure%22">Electronic band structure</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+resonators%22">Electric resonators</searchLink><br /><searchLink fieldCode="DE" term="%22Transformer+insulation%22">Transformer insulation</searchLink><br /><searchLink fieldCode="DE" term="%22Bandwidth+allocation%22">Bandwidth allocation</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This paper presents a mm-wave two-stage push-push BiCMOS frequency quadrupler for E-band wireless backhaul applications. To enhance gain-bandwidth product and overcome the limitations of classic push-push pairs, coupled resonators realized through low-k transformers are employed. A novel transformer layout is proposed for single-ended to differential conversion to achieve superior suppression of differential mismatches and enhanced gain. The measured prototype, fabricated in 55 nm BiCMOS technology, achieves a remarkable 27% fractional bandwidth around the center frequency of 74 GHz with a power consumption of 7 mW only. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Integration: The VLSI Journal is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.vlsi.2017.03.003 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 413 Subjects: – SubjectFull: BiCMOS memory circuits Type: general – SubjectFull: Electronic band structure Type: general – SubjectFull: Electric resonators Type: general – SubjectFull: Transformer insulation Type: general – SubjectFull: Bandwidth allocation Type: general Titles: – TitleFull: Design of low-power wideband frequency quadruplers based on transformer-coupled resonators for E-Band backhaul applications. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Iotti, Lorenzo – PersonEntity: Name: NameFull: Bassi, Matteo – PersonEntity: Name: NameFull: Mazzanti, Andrea – PersonEntity: Name: NameFull: Svelto, Francesco IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun2017 Type: published Y: 2017 Identifiers: – Type: issn-print Value: 01679260 Numbering: – Type: volume Value: 58 Titles: – TitleFull: Integration: The VLSI Journal Type: main |
| ResultId | 1 |
