Degradation and regeneration in mc-Si after different gettering steps.
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| Title: | Degradation and regeneration in mc-Si after different gettering steps. |
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| Authors: | Zuschlag, Annika1 annika.zuschlag@uni‐konstanz.de, Skorka, Daniel1, Hahn, Giso1 |
| Source: | Progress in Photovoltaics. Jul2017, Vol. 25 Issue 7, p545-552. 8p. |
| Subjects: | Gettering, High temperatures, Solar cells, Lighting, Surface passivation |
| Abstract: | Light and elevated temperature induced degradation (LeTID) affects significantly the performance of multicrystalline (mc) Si passivated emitter and rear cell (PERC) solar cells, and underlying mechanisms of LeTID are still unknown. In this work LeTID and following regeneration of an industrial mc-Si PERC solar cell is compared to differently processed minority charge carrier lifetime samples under illumination (1 sun) and elevated temperature (75 °C). LeTID on cell level reveals the same kinetics compared to lifetime samples. Varying the processing sequence has a significant effect on LeTID of lifetime samples. Ungettered samples with fired SiNx:H surface passivation show a very strong LeTID and regeneration effect, with degradation kinetics being similar for all wafer areas irrespective of initial material quality. In contrast, regeneration sets in earlier in good quality areas. Differently gettered samples with lower contamination level than ungettered samples are less sensitive to LeTID, while overall degradation and regeneration behavior is strongly influenced by applied gettering sequences. Al-gettered samples show a more pronounced degradation effect than P-gettered samples, leading to the assumption that P-gettering is more effective in the reduction of LeTID sensitive defects. If the gettering step is less effective, in lifetime samples after degradation a beginning regeneration effect could be observed. A model is presented, describing LeTID in boron as well as gallium doped mc-Si being based on impurities that can be gettered and redistributed during high temperature steps. Using this experimental approach helps to clarify the underlying mechanisms of LeTID and leads to a better understanding of degradation and regeneration mechanisms in mc Si. Copyright © 2016 John Wiley & Sons, Ltd [ABSTRACT FROM AUTHOR] |
| Copyright of Progress in Photovoltaics is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 123715891 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Degradation and regeneration in mc-Si after different gettering steps. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Zuschlag%2C+Annika%22">Zuschlag, Annika</searchLink><relatesTo>1</relatesTo><i> annika.zuschlag@uni‐konstanz.de</i><br /><searchLink fieldCode="AR" term="%22Skorka%2C+Daniel%22">Skorka, Daniel</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hahn%2C+Giso%22">Hahn, Giso</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Progress+in+Photovoltaics%22">Progress in Photovoltaics</searchLink>. Jul2017, Vol. 25 Issue 7, p545-552. 8p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Gettering%22">Gettering</searchLink><br /><searchLink fieldCode="DE" term="%22High+temperatures%22">High temperatures</searchLink><br /><searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Lighting%22">Lighting</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+passivation%22">Surface passivation</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Light and elevated temperature induced degradation (LeTID) affects significantly the performance of multicrystalline (mc) Si passivated emitter and rear cell (PERC) solar cells, and underlying mechanisms of LeTID are still unknown. In this work LeTID and following regeneration of an industrial mc-Si PERC solar cell is compared to differently processed minority charge carrier lifetime samples under illumination (1 sun) and elevated temperature (75 °C). LeTID on cell level reveals the same kinetics compared to lifetime samples. Varying the processing sequence has a significant effect on LeTID of lifetime samples. Ungettered samples with fired SiNx:H surface passivation show a very strong LeTID and regeneration effect, with degradation kinetics being similar for all wafer areas irrespective of initial material quality. In contrast, regeneration sets in earlier in good quality areas. Differently gettered samples with lower contamination level than ungettered samples are less sensitive to LeTID, while overall degradation and regeneration behavior is strongly influenced by applied gettering sequences. Al-gettered samples show a more pronounced degradation effect than P-gettered samples, leading to the assumption that P-gettering is more effective in the reduction of LeTID sensitive defects. If the gettering step is less effective, in lifetime samples after degradation a beginning regeneration effect could be observed. A model is presented, describing LeTID in boron as well as gallium doped mc-Si being based on impurities that can be gettered and redistributed during high temperature steps. Using this experimental approach helps to clarify the underlying mechanisms of LeTID and leads to a better understanding of degradation and regeneration mechanisms in mc Si. Copyright © 2016 John Wiley & Sons, Ltd [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Progress in Photovoltaics is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/pip.2832 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 545 Subjects: – SubjectFull: Gettering Type: general – SubjectFull: High temperatures Type: general – SubjectFull: Solar cells Type: general – SubjectFull: Lighting Type: general – SubjectFull: Surface passivation Type: general Titles: – TitleFull: Degradation and regeneration in mc-Si after different gettering steps. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Zuschlag, Annika – PersonEntity: Name: NameFull: Skorka, Daniel – PersonEntity: Name: NameFull: Hahn, Giso IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2017 Type: published Y: 2017 Identifiers: – Type: issn-print Value: 10627995 Numbering: – Type: volume Value: 25 – Type: issue Value: 7 Titles: – TitleFull: Progress in Photovoltaics Type: main |
| ResultId | 1 |
