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A CMOS reconfigurable distributed amplifier employing large-signal MGTR technique.

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Title: A CMOS reconfigurable distributed amplifier employing large-signal MGTR technique.
Authors: Zhang, Ying1,2 zhangying@njupt.edu.cn, Ma, Kaixue2, Zhang, Changchun1, Zhang, Yi1
Source: Microwave & Optical Technology Letters. Sep2017, Vol. 59 Issue 9, p2371-2375. 5p.
Subjects: Complementary metal oxide semiconductors, Distributed amplifiers, Transistors, Impedance matching, Electric lines
Abstract: This letter presents a reconfigurable CMOS distributed amplifier (DA) employing a large-signal (LS) multigated transistor (MGTR) topology for high efficiency and linearity. With separated gate bias voltage of gain cells, the DA can be reconfigurable to work at normal-gain (NG) mode and high-efficiency (HE) mode. The gradually changed artificial transmission line (ATL) connected to the output port is designed to increase the output power while maintaining good output impedance matching. At NG mode, the DA achieves an average forward gain of 11.8 dB from 1.6 to 17.8 GHz, while providing the output power at 1 dB output compression point (OP1 dB) of 5.8-9.64 dBm with the power added efficiency (PAE) of 2.2%-5.2% for frequencies 3-16 GHz. At HE mode, the DA has an average forward gain of 7.6 dB over 1-18.8 GHz, and achieves the OP1dB of 6.9-9.65 dBm with the high PAE of 6.6%-10.8% for frequencies 3-16 GHz. [ABSTRACT FROM AUTHOR]
Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 123805188
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  Data: A CMOS reconfigurable distributed amplifier employing large-signal MGTR technique.
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  Data: <searchLink fieldCode="AR" term="%22Zhang%2C+Ying%22">Zhang, Ying</searchLink><relatesTo>1,2</relatesTo><i> zhangying@njupt.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Ma%2C+Kaixue%22">Ma, Kaixue</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Changchun%22">Zhang, Changchun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Yi%22">Zhang, Yi</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Microwave+%26+Optical+Technology+Letters%22">Microwave & Optical Technology Letters</searchLink>. Sep2017, Vol. 59 Issue 9, p2371-2375. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Distributed+amplifiers%22">Distributed amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Impedance+matching%22">Impedance matching</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+lines%22">Electric lines</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This letter presents a reconfigurable CMOS distributed amplifier (DA) employing a large-signal (LS) multigated transistor (MGTR) topology for high efficiency and linearity. With separated gate bias voltage of gain cells, the DA can be reconfigurable to work at normal-gain (NG) mode and high-efficiency (HE) mode. The gradually changed artificial transmission line (ATL) connected to the output port is designed to increase the output power while maintaining good output impedance matching. At NG mode, the DA achieves an average forward gain of 11.8 dB from 1.6 to 17.8 GHz, while providing the output power at 1 dB output compression point (OP1 dB) of 5.8-9.64 dBm with the power added efficiency (PAE) of 2.2%-5.2% for frequencies 3-16 GHz. At HE mode, the DA has an average forward gain of 7.6 dB over 1-18.8 GHz, and achieves the OP1dB of 6.9-9.65 dBm with the high PAE of 6.6%-10.8% for frequencies 3-16 GHz. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1002/mop.30743
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 5
        StartPage: 2371
    Subjects:
      – SubjectFull: Complementary metal oxide semiconductors
        Type: general
      – SubjectFull: Distributed amplifiers
        Type: general
      – SubjectFull: Transistors
        Type: general
      – SubjectFull: Impedance matching
        Type: general
      – SubjectFull: Electric lines
        Type: general
    Titles:
      – TitleFull: A CMOS reconfigurable distributed amplifier employing large-signal MGTR technique.
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            NameFull: Zhang, Ying
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            NameFull: Ma, Kaixue
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            NameFull: Zhang, Changchun
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            NameFull: Zhang, Yi
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            – D: 01
              M: 09
              Text: Sep2017
              Type: published
              Y: 2017
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              Value: 59
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              Value: 9
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            – TitleFull: Microwave & Optical Technology Letters
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