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Development and Production of Array Barrier Detectors at SCD.

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Title: Development and Production of Array Barrier Detectors at SCD.
Authors: Klipstein, P.1 philip_k@scd.co.il, Avnon, E.1, Benny, Y.1, Berkowicz, E.1, Cohen, Y.1, Dobromislin, R.1, Fraenkel, R.1, Gershon, G.1, Glozman, A.1, Hojman, E.1, Ilan, E.1, Karni, Y.1, Klin, O.1, Kodriano, Y.1, Krasovitsky, L.1, Langof, L.1, Lukomsky, I.1, Nevo, I.1, Nitzani, M.1, Pivnik, I.1
Source: Journal of Electronic Materials. Sep2017, Vol. 46 Issue 9, p5386-5393. 8p.
Subjects: Infrared array detectors, Mercury cadmium tellurides, Quantum chemistry, Quantum efficiency, Semiconductor devices, Focal plane arrays sensors
Abstract: XB n or XB p barrier detectors exhibit diffusion-limited dark currents comparable with mercury cadmium telluride Rule-07 and high quantum efficiencies. In 2011, SemiConductor Devices (SCD) introduced 'HOT Pelican D', a 640 × 512/15- μm pitch InAsSb/AlSbAs XB n mid-wave infrared (MWIR) detector with a 4.2- μm cut-off and an operating temperature of ∼150 K. Its low power (∼3 W), high pixel operability (>99.5%) and long mean time to failure make HOT Pelican D a highly reliable integrated detector-cooler product with a low size, weight and power. More recently, 'HOT Hercules' was launched with a 1280 × 1024/15- μm format and similar advantages. A 3-megapixel, 10- μm pitch version ('HOT Blackbird') is currently completing development. For long-wave infrared applications, SCD's 640 × 512/15- μm pitch 'Pelican-D LW' XB p type II superlattice (T2SL) detector has a ∼9.3- μm cut-off wavelength. The detector contains InAs/GaSb and InAs/AlSb T2SLs, and is fabricated into focal plane array (FPA) detectors using standard production processes including hybridization to a digital silicon read-out integrated circuit (ROIC), glue underfill and substrate thinning. The ROIC has been designed so that the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector family. The Pelican-D LW FPA has a quantum efficiency of ∼50%, and operates at 77 K with a pixel operability of >99% and noise equivalent temperature difference of 13 mK at 30 Hz and F/2.7. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Development and Production of Array Barrier Detectors at SCD.
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  Data: <searchLink fieldCode="AR" term="%22Klipstein%2C+P%2E%22">Klipstein, P.</searchLink><relatesTo>1</relatesTo><i> philip_k@scd.co.il</i><br /><searchLink fieldCode="AR" term="%22Avnon%2C+E%2E%22">Avnon, E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Benny%2C+Y%2E%22">Benny, Y.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Berkowicz%2C+E%2E%22">Berkowicz, E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Cohen%2C+Y%2E%22">Cohen, Y.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Dobromislin%2C+R%2E%22">Dobromislin, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Fraenkel%2C+R%2E%22">Fraenkel, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Gershon%2C+G%2E%22">Gershon, G.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Glozman%2C+A%2E%22">Glozman, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hojman%2C+E%2E%22">Hojman, E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ilan%2C+E%2E%22">Ilan, E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Karni%2C+Y%2E%22">Karni, Y.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Klin%2C+O%2E%22">Klin, O.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kodriano%2C+Y%2E%22">Kodriano, Y.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Krasovitsky%2C+L%2E%22">Krasovitsky, L.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Langof%2C+L%2E%22">Langof, L.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lukomsky%2C+I%2E%22">Lukomsky, I.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Nevo%2C+I%2E%22">Nevo, I.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Nitzani%2C+M%2E%22">Nitzani, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Pivnik%2C+I%2E%22">Pivnik, I.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Sep2017, Vol. 46 Issue 9, p5386-5393. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Infrared+array+detectors%22">Infrared array detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Mercury+cadmium+tellurides%22">Mercury cadmium tellurides</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+chemistry%22">Quantum chemistry</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+efficiency%22">Quantum efficiency</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+devices%22">Semiconductor devices</searchLink><br /><searchLink fieldCode="DE" term="%22Focal+plane+arrays+sensors%22">Focal plane arrays sensors</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: XB n or XB p barrier detectors exhibit diffusion-limited dark currents comparable with mercury cadmium telluride Rule-07 and high quantum efficiencies. In 2011, SemiConductor Devices (SCD) introduced 'HOT Pelican D', a 640 × 512/15- μm pitch InAsSb/AlSbAs XB n mid-wave infrared (MWIR) detector with a 4.2- μm cut-off and an operating temperature of ∼150 K. Its low power (∼3 W), high pixel operability (>99.5%) and long mean time to failure make HOT Pelican D a highly reliable integrated detector-cooler product with a low size, weight and power. More recently, 'HOT Hercules' was launched with a 1280 × 1024/15- μm format and similar advantages. A 3-megapixel, 10- μm pitch version ('HOT Blackbird') is currently completing development. For long-wave infrared applications, SCD's 640 × 512/15- μm pitch 'Pelican-D LW' XB p type II superlattice (T2SL) detector has a ∼9.3- μm cut-off wavelength. The detector contains InAs/GaSb and InAs/AlSb T2SLs, and is fabricated into focal plane array (FPA) detectors using standard production processes including hybridization to a digital silicon read-out integrated circuit (ROIC), glue underfill and substrate thinning. The ROIC has been designed so that the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector family. The Pelican-D LW FPA has a quantum efficiency of ∼50%, and operates at 77 K with a pixel operability of >99% and noise equivalent temperature difference of 13 mK at 30 Hz and F/2.7. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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