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Design and Sensitivity Improvement of CMOS-MEMS Scanning Microwave Microscopes.

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Bibliographic Details
Title: Design and Sensitivity Improvement of CMOS-MEMS Scanning Microwave Microscopes.
Authors: Azizi, Mostafa1, Mansour, Raafat R.1
Source: IEEE Transactions on Microwave Theory & Techniques. Aug2017, Vol. 65 Issue 8, p2749-2761. 13p.
Subjects: Atomic force microscopes, CMOS integrated circuits, Microelectromechanical systems, Scanning probe microscopy, Coaxial cables
Abstract: In this paper, we present the performance and imaging results of an integrated single-chip CMOS-microelectromechanical systems (MEMS) scanning microwave microscope (SMM). A systematic analysis for sensitivity improvement is described in detail. We first explain why it is important to have high sensitivity for this type of microscope and then propose a systematic method to analyze and design the entire structure for better sensitivity. For this, accurate lumped models are derived for each section of the system and comparisons are made between different designs. Furthermore, a new concept based on the quality factor of the individual sections is described to give the designer a tool to improve the sensitivity of individual sections without the need to simulate or model the entire system. A high-sensitivity measurement system is also explained. Finally some measurement results are presented. While the analysis presented in this paper is for CMOS-MEMS SMM, it is applicable to any type of SMM. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:In this paper, we present the performance and imaging results of an integrated single-chip CMOS-microelectromechanical systems (MEMS) scanning microwave microscope (SMM). A systematic analysis for sensitivity improvement is described in detail. We first explain why it is important to have high sensitivity for this type of microscope and then propose a systematic method to analyze and design the entire structure for better sensitivity. For this, accurate lumped models are derived for each section of the system and comparisons are made between different designs. Furthermore, a new concept based on the quality factor of the individual sections is described to give the designer a tool to improve the sensitivity of individual sections without the need to simulate or model the entire system. A high-sensitivity measurement system is also explained. Finally some measurement results are presented. While the analysis presented in this paper is for CMOS-MEMS SMM, it is applicable to any type of SMM. [ABSTRACT FROM AUTHOR]
ISSN:00189480
DOI:10.1109/TMTT.2017.2671359