Bibliographic Details
| Title: |
Deformation behavior of Mo5SiB2. |
| Authors: |
Medvedeva, N.I.1,2 medvedeva@ihim.uran.ru, Kontsevoi, O.Y.1,3, Freeman, A.J.1, Perepezko, J.H.4 |
| Source: |
Intermetallics. Nov2017, Vol. 90, p54-57. 4p. |
| Subjects: |
Dislocation interactions, Reaction mechanisms (Chemistry), Solid solutions, Charge density waves, Temperature effect, Chemical relaxation |
| Abstract: |
First-principles calculations were employed to analyze the possible slip systems in Mo 5 SiB 2 . A striking result was obtained that the three most favorable slip systems, <100>(001), <110>(001) and [001]{010}, have close stacking fault energies, and the preference among them cannot be established. This finding explains a large variety of experimentally observed slip systems in Mo 5 SiB 2 . The dislocations associated with these slip systems may dissociate into partials joined with stacking faults and separated by the large splitting width of 5–6 nm. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
