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Photoconductivity relaxation processes in AgCd2GaS4 single crystals.

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Title: Photoconductivity relaxation processes in AgCd2GaS4 single crystals.
Authors: Myronchuk, G.L.1, Piasecki, M.1,2 m.piasecki@ajd.czest.pl, Krymus, A.S.1, Kityk, I.V.1,3, Vlokh, R.O.4, Fedorchuk, A.O.5, Kozer, V.R.6, Parasyuk, O.V.6
Source: Materials Chemistry & Physics. Oct2017, Vol. 200, p250-256. 7p.
Subjects: Single crystals, Radiation absorption, Band gaps, Crystallography, Photoconductivity
Abstract: Optical and photoelectric spectral features of AgCd 2 GaS 4 single crystal were explored. Optical band gap energy was estimated from the absorption and was varied within 2.18–2.28 eV (at ambient temperature) for the samples cut from different parts of the single-crystalline specimens. The results of the photoconductivity relaxation study within the temperature range 100–280 K were explored within a framework of the adhesion trapping level model. It was established that the AgCd 2 GaS 4 crystals exhibit long-term relaxation of photoconductivity with adhesion levels at energies about 0.2 eV. [ABSTRACT FROM AUTHOR]
Copyright of Materials Chemistry & Physics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 124857183
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Photoconductivity relaxation processes in AgCd2GaS4 single crystals.
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  Data: <searchLink fieldCode="AR" term="%22Myronchuk%2C+G%2EL%2E%22">Myronchuk, G.L.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Piasecki%2C+M%2E%22">Piasecki, M.</searchLink><relatesTo>1,2</relatesTo><i> m.piasecki@ajd.czest.pl</i><br /><searchLink fieldCode="AR" term="%22Krymus%2C+A%2ES%2E%22">Krymus, A.S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kityk%2C+I%2EV%2E%22">Kityk, I.V.</searchLink><relatesTo>1,3</relatesTo><br /><searchLink fieldCode="AR" term="%22Vlokh%2C+R%2EO%2E%22">Vlokh, R.O.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Fedorchuk%2C+A%2EO%2E%22">Fedorchuk, A.O.</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AR" term="%22Kozer%2C+V%2ER%2E%22">Kozer, V.R.</searchLink><relatesTo>6</relatesTo><br /><searchLink fieldCode="AR" term="%22Parasyuk%2C+O%2EV%2E%22">Parasyuk, O.V.</searchLink><relatesTo>6</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Chemistry+%26+Physics%22">Materials Chemistry & Physics</searchLink>. Oct2017, Vol. 200, p250-256. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Single+crystals%22">Single crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Radiation+absorption%22">Radiation absorption</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Crystallography%22">Crystallography</searchLink><br /><searchLink fieldCode="DE" term="%22Photoconductivity%22">Photoconductivity</searchLink>
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  Data: Optical and photoelectric spectral features of AgCd 2 GaS 4 single crystal were explored. Optical band gap energy was estimated from the absorption and was varied within 2.18–2.28 eV (at ambient temperature) for the samples cut from different parts of the single-crystalline specimens. The results of the photoconductivity relaxation study within the temperature range 100–280 K were explored within a framework of the adhesion trapping level model. It was established that the AgCd 2 GaS 4 crystals exhibit long-term relaxation of photoconductivity with adhesion levels at energies about 0.2 eV. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Materials Chemistry & Physics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.matchemphys.2017.07.053
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 250
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        Type: general
      – SubjectFull: Radiation absorption
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      – SubjectFull: Band gaps
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      – SubjectFull: Crystallography
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      – SubjectFull: Photoconductivity
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              Text: Oct2017
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