View in EDS

A K-Band Low-Power Phase Shifter Based on Injection Locked Oscillator in 0.13 μm CMOS Technology.

Saved in:
Bibliographic Details
Title: A K-Band Low-Power Phase Shifter Based on Injection Locked Oscillator in 0.13 μm CMOS Technology.
Authors: Qiu, Qi-Lin1, Yu, Xiao-Peng1 xpyu@pmail.ntu.edu.sg, Sui, Wen-Quan1
Source: Journal of Infrared, Millimeter & Terahertz Waves. Nov2017, Vol. 38 Issue 11, p1368-1386. 19p.
Subjects: Injection locked oscillators, Complementary metal oxide semiconductors, Phase shifters, Energy consumption, Voltage-controlled oscillators
Abstract: In this paper, the design challenges of the injection-locked oscillator (ILO)-based phase shifter are reviewed and analyzed. The key design considerations such as the operating frequency, locking range, and linearity of the phase shifters are analysed in detail. It is possible to optimize the phase shifter in certain parameters such as ultra-low power while meeting the requirements of a certain system. As a design example, a K-band phase shifter is implemented using a commercial 0.13 μm CMOS technology, where a conventional LC tank based topology is implemented but optimised with a good balance among power consumption, working range, sensitivity, and silicon area, etc. Measurement results show that the proposed phase shift is able to work at 22-23.4 GHz with a range of 180 while consuming 3.14 mW from a 1.2 V supply voltage. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Infrared, Millimeter & Terahertz Waves is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 125425307
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: A K-Band Low-Power Phase Shifter Based on Injection Locked Oscillator in 0.13 μm CMOS Technology.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Qiu%2C+Qi-Lin%22">Qiu, Qi-Lin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yu%2C+Xiao-Peng%22">Yu, Xiao-Peng</searchLink><relatesTo>1</relatesTo><i> xpyu@pmail.ntu.edu.sg</i><br /><searchLink fieldCode="AR" term="%22Sui%2C+Wen-Quan%22">Sui, Wen-Quan</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Infrared%2C+Millimeter+%26+Terahertz+Waves%22">Journal of Infrared, Millimeter & Terahertz Waves</searchLink>. Nov2017, Vol. 38 Issue 11, p1368-1386. 19p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Injection+locked+oscillators%22">Injection locked oscillators</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+shifters%22">Phase shifters</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+consumption%22">Energy consumption</searchLink><br /><searchLink fieldCode="DE" term="%22Voltage-controlled+oscillators%22">Voltage-controlled oscillators</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this paper, the design challenges of the injection-locked oscillator (ILO)-based phase shifter are reviewed and analyzed. The key design considerations such as the operating frequency, locking range, and linearity of the phase shifters are analysed in detail. It is possible to optimize the phase shifter in certain parameters such as ultra-low power while meeting the requirements of a certain system. As a design example, a K-band phase shifter is implemented using a commercial 0.13 μm CMOS technology, where a conventional LC tank based topology is implemented but optimised with a good balance among power consumption, working range, sensitivity, and silicon area, etc. Measurement results show that the proposed phase shift is able to work at 22-23.4 GHz with a range of 180 while consuming 3.14 mW from a 1.2 V supply voltage. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Infrared, Millimeter & Terahertz Waves is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=125425307
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10762-017-0424-8
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 19
        StartPage: 1368
    Subjects:
      – SubjectFull: Injection locked oscillators
        Type: general
      – SubjectFull: Complementary metal oxide semiconductors
        Type: general
      – SubjectFull: Phase shifters
        Type: general
      – SubjectFull: Energy consumption
        Type: general
      – SubjectFull: Voltage-controlled oscillators
        Type: general
    Titles:
      – TitleFull: A K-Band Low-Power Phase Shifter Based on Injection Locked Oscillator in 0.13 μm CMOS Technology.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Qiu, Qi-Lin
      – PersonEntity:
          Name:
            NameFull: Yu, Xiao-Peng
      – PersonEntity:
          Name:
            NameFull: Sui, Wen-Quan
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 11
              Text: Nov2017
              Type: published
              Y: 2017
          Identifiers:
            – Type: issn-print
              Value: 18666892
          Numbering:
            – Type: volume
              Value: 38
            – Type: issue
              Value: 11
          Titles:
            – TitleFull: Journal of Infrared, Millimeter & Terahertz Waves
              Type: main
ResultId 1