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Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg3Sb2-based materials.

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Title: Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg3Sb2-based materials.
Authors: Jun Mao1,2,3, Jing Shuai1,2, Shaowei Song1,2, Yixuan Wu4, Dally, Rebecca5,6, Jiawei Zhou7, Zihang Liu1,2, Jifeng Sun8, Qinyong Zhang9,10, Dela Cruz, Clarina11, Wilson, Stephen5, Yanzhong Pei4, Singh, David J.8, Gang Chen7, Ching-Wu Chu1,2 cwchu@uh.edu, Zhifeng Ren1,2 zren@uh.edu
Source: Proceedings of the National Academy of Sciences of the United States of America. 10/3/2017, Vol. 114 Issue 40, p10548-10553. 6p.
Subjects: Scattering potentials, Carrier proteins, Thermoelectric effects, Thermal conductivity, Ionized gases
Abstract: Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mechanism in n-type Mg3Sb2-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved. In this work, Fe, Co, Hf, and Ta are doped on the Mg site of Mg3.2Sb1.5Bi0.49Te0.01, where the ionized impurity scattering crosses over to mixed ionized impurity and acoustic phonon scattering. A significant improvement in Hall mobility from ~16 to ~81 cm²⋅V-1⋅s-1 is obtained, thus leading to a notably enhanced power factor of ~13 µW⋅cm-1⋅K-2 from ~5 µW⋅cm-1⋅K-2. A simultaneous reduction in thermal conductivity is also achieved. Collectively, a figure of merit (ZT) of ~1.7 is obtained at 773 K in Mg3.1Co0.1Sb1.5Bi0.49Te0.01. The concept of manipulating the carrier scattering mechanism to improve the mobility should also be applicable to other material systems. [ABSTRACT FROM AUTHOR]
Copyright of Proceedings of the National Academy of Sciences of the United States of America is the property of National Academy of Sciences and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 125529108
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg<subscript>3</subscript>Sb<subscript>2</subscript>-based materials.
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  Data: <searchLink fieldCode="AR" term="%22Jun+Mao%22">Jun Mao</searchLink><relatesTo>1,2,3</relatesTo><br /><searchLink fieldCode="AR" term="%22Jing+Shuai%22">Jing Shuai</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Shaowei+Song%22">Shaowei Song</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Yixuan+Wu%22">Yixuan Wu</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Dally%2C+Rebecca%22">Dally, Rebecca</searchLink><relatesTo>5,6</relatesTo><br /><searchLink fieldCode="AR" term="%22Jiawei+Zhou%22">Jiawei Zhou</searchLink><relatesTo>7</relatesTo><br /><searchLink fieldCode="AR" term="%22Zihang+Liu%22">Zihang Liu</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Jifeng+Sun%22">Jifeng Sun</searchLink><relatesTo>8</relatesTo><br /><searchLink fieldCode="AR" term="%22Qinyong+Zhang%22">Qinyong Zhang</searchLink><relatesTo>9,10</relatesTo><br /><searchLink fieldCode="AR" term="%22Dela+Cruz%2C+Clarina%22">Dela Cruz, Clarina</searchLink><relatesTo>11</relatesTo><br /><searchLink fieldCode="AR" term="%22Wilson%2C+Stephen%22">Wilson, Stephen</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AR" term="%22Yanzhong+Pei%22">Yanzhong Pei</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Singh%2C+David+J%2E%22">Singh, David J.</searchLink><relatesTo>8</relatesTo><br /><searchLink fieldCode="AR" term="%22Gang+Chen%22">Gang Chen</searchLink><relatesTo>7</relatesTo><br /><searchLink fieldCode="AR" term="%22Ching-Wu+Chu%22">Ching-Wu Chu</searchLink><relatesTo>1,2</relatesTo><i> cwchu@uh.edu</i><br /><searchLink fieldCode="AR" term="%22Zhifeng+Ren%22">Zhifeng Ren</searchLink><relatesTo>1,2</relatesTo><i> zren@uh.edu</i>
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  Data: <searchLink fieldCode="DE" term="%22Scattering+potentials%22">Scattering potentials</searchLink><br /><searchLink fieldCode="DE" term="%22Carrier+proteins%22">Carrier proteins</searchLink><br /><searchLink fieldCode="DE" term="%22Thermoelectric+effects%22">Thermoelectric effects</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+conductivity%22">Thermal conductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Ionized+gases%22">Ionized gases</searchLink>
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  Label: Abstract
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  Data: Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mechanism in n-type Mg3Sb2-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved. In this work, Fe, Co, Hf, and Ta are doped on the Mg site of Mg3.2Sb1.5Bi0.49Te0.01, where the ionized impurity scattering crosses over to mixed ionized impurity and acoustic phonon scattering. A significant improvement in Hall mobility from ~16 to ~81 cm²⋅V-1⋅s-1 is obtained, thus leading to a notably enhanced power factor of ~13 µW⋅cm-1⋅K-2 from ~5 µW⋅cm-1⋅K-2. A simultaneous reduction in thermal conductivity is also achieved. Collectively, a figure of merit (ZT) of ~1.7 is obtained at 773 K in Mg3.1Co0.1Sb1.5Bi0.49Te0.01. The concept of manipulating the carrier scattering mechanism to improve the mobility should also be applicable to other material systems. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Proceedings of the National Academy of Sciences of the United States of America is the property of National Academy of Sciences and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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        Value: 10.1073/pnas.1711725114
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 10548
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      – SubjectFull: Scattering potentials
        Type: general
      – SubjectFull: Carrier proteins
        Type: general
      – SubjectFull: Thermoelectric effects
        Type: general
      – SubjectFull: Thermal conductivity
        Type: general
      – SubjectFull: Ionized gases
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      – TitleFull: Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg3Sb2-based materials.
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              Text: 10/3/2017
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