View in EDS

Analysis of SEL on Commercial SRAM Memories and Mixed-Field Characterization of a Latchup Detection Circuit for LEO Space Applications.

Saved in:
Bibliographic Details
Title: Analysis of SEL on Commercial SRAM Memories and Mixed-Field Characterization of a Latchup Detection Circuit for LEO Space Applications.
Authors: Secondo, R.1, Alia, R. Garcia1, Peronnard, P.1, Brugger, M.1, Masi, A.1, Danzeca, S.1, Merlenghi, A.1, Vaille, J. R.2, Dusseau, L.3
Source: IEEE Transactions on Nuclear Science. Aug2017, Vol. 64 Issue 8 Part 1, p2107-2114. 8p.
Subjects: Static random access memory chips, Integrated memory circuits, Static random access memory, Nanosatellites, Artificial satellites
Abstract: A single event latchup (SEL) experiment based on commercial static random access memory (SRAM) memories has recently been proposed in the framework of the European Organization for Nuclear Research (CERN) Latchup Experiment and Student Satellite nanosatellite low Earth orbit (LEO) space mission. SEL characterization of three commercial SRAM memories has been carried out at the Paul Scherrer Institut (PSI) facility, using monoenergetic focused proton beams and different acquisition setups. The best target candidate was selected and a circuit for SEL detection has been proposed and tested at CERN, in the CERN High Energy AcceleRator Mixed-field facility (CHARM). Experimental results were carried out at test locations representative of the LEO environment, thus providing a full characterization of the SRAM cross sections, together with the analysis of the single-event effect and total ionizing dose of the latchup detection circuit in relation to the particle spectra expected during mission. The setups used for SEL monitoring are described, and details of the proposed circuit components and topology are presented. Experimental results obtained both at PSI and at CHARM facilities are discussed. [ABSTRACT FROM PUBLISHER]
Copyright of IEEE Transactions on Nuclear Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 125531014
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Analysis of SEL on Commercial SRAM Memories and Mixed-Field Characterization of a Latchup Detection Circuit for LEO Space Applications.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Secondo%2C+R%2E%22">Secondo, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Alia%2C+R%2E+Garcia%22">Alia, R. Garcia</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Peronnard%2C+P%2E%22">Peronnard, P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Brugger%2C+M%2E%22">Brugger, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Masi%2C+A%2E%22">Masi, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Danzeca%2C+S%2E%22">Danzeca, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Merlenghi%2C+A%2E%22">Merlenghi, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Vaille%2C+J%2E+R%2E%22">Vaille, J. R.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Dusseau%2C+L%2E%22">Dusseau, L.</searchLink><relatesTo>3</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Nuclear+Science%22">IEEE Transactions on Nuclear Science</searchLink>. Aug2017, Vol. 64 Issue 8 Part 1, p2107-2114. 8p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Static+random+access+memory+chips%22">Static random access memory chips</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+memory+circuits%22">Integrated memory circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Static+random+access+memory%22">Static random access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Nanosatellites%22">Nanosatellites</searchLink><br /><searchLink fieldCode="DE" term="%22Artificial+satellites%22">Artificial satellites</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: A single event latchup (SEL) experiment based on commercial static random access memory (SRAM) memories has recently been proposed in the framework of the European Organization for Nuclear Research (CERN) Latchup Experiment and Student Satellite nanosatellite low Earth orbit (LEO) space mission. SEL characterization of three commercial SRAM memories has been carried out at the Paul Scherrer Institut (PSI) facility, using monoenergetic focused proton beams and different acquisition setups. The best target candidate was selected and a circuit for SEL detection has been proposed and tested at CERN, in the CERN High Energy AcceleRator Mixed-field facility (CHARM). Experimental results were carried out at test locations representative of the LEO environment, thus providing a full characterization of the SRAM cross sections, together with the analysis of the single-event effect and total ionizing dose of the latchup detection circuit in relation to the particle spectra expected during mission. The setups used for SEL monitoring are described, and details of the proposed circuit components and topology are presented. Experimental results obtained both at PSI and at CHARM facilities are discussed. [ABSTRACT FROM PUBLISHER]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Nuclear Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=125531014
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/TNS.2017.2691403
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 2107
    Subjects:
      – SubjectFull: Static random access memory chips
        Type: general
      – SubjectFull: Integrated memory circuits
        Type: general
      – SubjectFull: Static random access memory
        Type: general
      – SubjectFull: Nanosatellites
        Type: general
      – SubjectFull: Artificial satellites
        Type: general
    Titles:
      – TitleFull: Analysis of SEL on Commercial SRAM Memories and Mixed-Field Characterization of a Latchup Detection Circuit for LEO Space Applications.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Secondo, R.
      – PersonEntity:
          Name:
            NameFull: Alia, R. Garcia
      – PersonEntity:
          Name:
            NameFull: Peronnard, P.
      – PersonEntity:
          Name:
            NameFull: Brugger, M.
      – PersonEntity:
          Name:
            NameFull: Masi, A.
      – PersonEntity:
          Name:
            NameFull: Danzeca, S.
      – PersonEntity:
          Name:
            NameFull: Merlenghi, A.
      – PersonEntity:
          Name:
            NameFull: Vaille, J. R.
      – PersonEntity:
          Name:
            NameFull: Dusseau, L.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 08
              Text: Aug2017
              Type: published
              Y: 2017
          Identifiers:
            – Type: issn-print
              Value: 00189499
          Numbering:
            – Type: volume
              Value: 64
            – Type: issue
              Value: 8 Part 1
          Titles:
            – TitleFull: IEEE Transactions on Nuclear Science
              Type: main
ResultId 1