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Statistical Deviations From the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs.

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Title: Statistical Deviations From the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs.
Authors: Franco, Francisco J.1, Clemente, Juan Antonio2, Baylac, Maud3, Rey, Solenne3, Villa, Francesca3, Mecha, Hortensia2, Agapito, Juan A.1, Puchner, Helmut4, Hubert, Guillaume5, Velazco, Raoul6
Source: IEEE Transactions on Nuclear Science. Aug2017, Vol. 64 Issue 8 Part 1, p2152-2160. 9p.
Subjects: Static random access memory chips, Integrated memory circuits, Static random access memory, Programming languages, Electronic data processing
Abstract: This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bit flip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are single bit upsets. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments). [ABSTRACT FROM PUBLISHER]
Copyright of IEEE Transactions on Nuclear Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
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AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Statistical Deviations From the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs.
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Nuclear+Science%22">IEEE Transactions on Nuclear Science</searchLink>. Aug2017, Vol. 64 Issue 8 Part 1, p2152-2160. 9p.
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  Data: <searchLink fieldCode="DE" term="%22Static+random+access+memory+chips%22">Static random access memory chips</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+memory+circuits%22">Integrated memory circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Static+random+access+memory%22">Static random access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Programming+languages%22">Programming languages</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+data+processing%22">Electronic data processing</searchLink>
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  Data: This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bit flip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are single bit upsets. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments). [ABSTRACT FROM PUBLISHER]
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  Data: <i>Copyright of IEEE Transactions on Nuclear Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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