Liu, P., Lin, C., Hudec, B., & Hou, T. (2017). Internal current amplification induced by dielectric hole trapping in monolayer MoS2 transistor. Nanotechnology, 28(47), 1. https://doi.org/10.1088/1361-6528/aa8fb0
Chicago Style (17th ed.) CitationLiu, Pang-Shiuan, Ching-Ting Lin, Boris Hudec, and Tuo-Hung Hou. "Internal Current Amplification Induced by Dielectric Hole Trapping in Monolayer MoS2 Transistor." Nanotechnology 28, no. 47 (2017): 1. https://doi.org/10.1088/1361-6528/aa8fb0.
MLA (9th ed.) CitationLiu, Pang-Shiuan, et al. "Internal Current Amplification Induced by Dielectric Hole Trapping in Monolayer MoS2 Transistor." Nanotechnology, vol. 28, no. 47, 2017, p. 1, https://doi.org/10.1088/1361-6528/aa8fb0.
Warning: These citations may not always be 100% accurate.