Internal current amplification induced by dielectric hole trapping in monolayer MoS2 transistor.
Saved in:
| Title: | Internal current amplification induced by dielectric hole trapping in monolayer MoS2 transistor. |
|---|---|
| Authors: | Pang-Shiuan Liu1, Ching-Ting Lin1, Boris Hudec1, Tuo-Hung Hou1,2 thhou@mail.nctu.edu.tw |
| Source: | Nanotechnology. 11/24/2017, Vol. 28 Issue 47, p1-1. 1p. |
| Subjects: | Molybdenum disulfide, Monomolecular films, Transition metals |
| Abstract: | Carrier transport in layered transition-metal dichalcogenides is highly sensitive to surrounding charges because of the atomically thin thickness. By exploiting this property, we report a new internal current amplification mechanism through positive feedback induced by dielectric hole trapping in a MoS2 back-gate transistor on a tantalum oxide substrate. The device exhibits an extremely steep subthreshold slope of 17 mV/decade, which is strongly dependent on the substrate material and drain bias. The steep subthreshold slope is attributed to the internal current amplification arising from the positive feedback between hole generation in MoS2 triggered by large lateral electric field and Schottky barrier narrowing induced by localized hole trapping in tantalum oxide near the source contact. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 126012440 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Internal current amplification induced by dielectric hole trapping in monolayer MoS2 transistor. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Pang-Shiuan+Liu%22">Pang-Shiuan Liu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ching-Ting+Lin%22">Ching-Ting Lin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Boris+Hudec%22">Boris Hudec</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Tuo-Hung+Hou%22">Tuo-Hung Hou</searchLink><relatesTo>1,2</relatesTo><i> thhou@mail.nctu.edu.tw</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanotechnology%22">Nanotechnology</searchLink>. 11/24/2017, Vol. 28 Issue 47, p1-1. 1p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Molybdenum+disulfide%22">Molybdenum disulfide</searchLink><br /><searchLink fieldCode="DE" term="%22Monomolecular+films%22">Monomolecular films</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+metals%22">Transition metals</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Carrier transport in layered transition-metal dichalcogenides is highly sensitive to surrounding charges because of the atomically thin thickness. By exploiting this property, we report a new internal current amplification mechanism through positive feedback induced by dielectric hole trapping in a MoS2 back-gate transistor on a tantalum oxide substrate. The device exhibits an extremely steep subthreshold slope of 17 mV/decade, which is strongly dependent on the substrate material and drain bias. The steep subthreshold slope is attributed to the internal current amplification arising from the positive feedback between hole generation in MoS2 triggered by large lateral electric field and Schottky barrier narrowing induced by localized hole trapping in tantalum oxide near the source contact. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=126012440 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1088/1361-6528/aa8fb0 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 1 StartPage: 1 Subjects: – SubjectFull: Molybdenum disulfide Type: general – SubjectFull: Monomolecular films Type: general – SubjectFull: Transition metals Type: general Titles: – TitleFull: Internal current amplification induced by dielectric hole trapping in monolayer MoS2 transistor. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Pang-Shiuan Liu – PersonEntity: Name: NameFull: Ching-Ting Lin – PersonEntity: Name: NameFull: Boris Hudec – PersonEntity: Name: NameFull: Tuo-Hung Hou IsPartOfRelationships: – BibEntity: Dates: – D: 24 M: 11 Text: 11/24/2017 Type: published Y: 2017 Identifiers: – Type: issn-print Value: 09574484 Numbering: – Type: volume Value: 28 – Type: issue Value: 47 Titles: – TitleFull: Nanotechnology Type: main |
| ResultId | 1 |
