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Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates.

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Title: Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates.
Authors: Baidus, N.1 bnv@nifti.unn.ru, Aleshkin, V., Dubinov, A., Kudryavtsev, K., Nekorkin, S.1, Novikov, A., Pavlov, D.1, Rykov, A.1, Sushkov, A.1, Shaleev, M., Yunin, P., Yurasov, D., Yablonskiy, A.1, Krasilnik, Z.
Source: Semiconductors. Nov2017, Vol. 51 Issue 11, p1527-1530. 4p.
Subjects: Gallium arsenide transistors, Optical quality control, Engineering inspection, Optical measurements, Quantum wells
Abstract: The growth of InGaAs/GaAs/AlGaAs laser structures by MOCVD at low pressures on Si(001) substrates with a Ge epitaxial metamorphic buffer layer of various thicknesses is studied. The results of the influence of the growth temperature and incorporation of additional AlAs layers at the boundary with the Ge/Si(001) substrate on the crystalline and optical quality of the formed III-V structures are presented. It is shown that the incorporation of the AlAs/GaAs/AlAs lattice at the initial growth stages of III-V heterostructures on Ge buffer layers grown on exact Si(001) substrates makes it possible to considerably decrease the density of threading defects and, consequently, form effectively emitting laser structures. The possibility of growing strained InGaAs quantum wells on Si(001) substrates allowing stimulated radiation in a wavelength region longer than 1100 nm is shown. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates.
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  Data: <searchLink fieldCode="DE" term="%22Gallium+arsenide+transistors%22">Gallium arsenide transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+quality+control%22">Optical quality control</searchLink><br /><searchLink fieldCode="DE" term="%22Engineering+inspection%22">Engineering inspection</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+measurements%22">Optical measurements</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+wells%22">Quantum wells</searchLink>
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  Data: The growth of InGaAs/GaAs/AlGaAs laser structures by MOCVD at low pressures on Si(001) substrates with a Ge epitaxial metamorphic buffer layer of various thicknesses is studied. The results of the influence of the growth temperature and incorporation of additional AlAs layers at the boundary with the Ge/Si(001) substrate on the crystalline and optical quality of the formed III-V structures are presented. It is shown that the incorporation of the AlAs/GaAs/AlAs lattice at the initial growth stages of III-V heterostructures on Ge buffer layers grown on exact Si(001) substrates makes it possible to considerably decrease the density of threading defects and, consequently, form effectively emitting laser structures. The possibility of growing strained InGaAs quantum wells on Si(001) substrates allowing stimulated radiation in a wavelength region longer than 1100 nm is shown. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Semiconductors is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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