A DC-90-GHz 4- V\mathrm{ pp} Modulator Driver in a 0.13- \mu \textm SiGe:C BiCMOS Process.
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| Title: | A DC-90-GHz 4- V\mathrm{ pp} Modulator Driver in a 0.13- \mu \textm SiGe:C BiCMOS Process. |
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| Authors: | Rito, Pedro1, Garcia Lopez, Iria1, Awny, Ahmed1, Ko, Minsu1, Ulusoy, Ahmet Cagri2, Kissinger, Dietmar3 |
| Source: | IEEE Transactions on Microwave Theory & Techniques. Dec2017, Vol. 65 Issue 12 Part2, p5192-5202. 11p. |
| Subjects: | Integrated circuits, Distributed amplifiers, Broadband amplifiers, BiCMOS memory circuits, Electronic modulators |
| Abstract: | In this paper, a linear driver for optical modulators in a 0.13- \mu \textm SiGe:C BiCMOS technology with fT/f\text {max} of 300/500 GHz is presented. The design is implemented following a distributed amplifier topology in a differential manner. The driver features a small-signal gain of 12.5 dB and a 3-dB bandwidth of 90 GHz and delivers a maximum output amplitude of 4~V\text {pp} to a 100- $\Omega $ differential load. Delivering the maximum output swing, the large-signal gain is 10.5 dB. Time-domain measurements are performed, showing the maximum output swing with ON–OFF keying (OOK) eye-diagrams up to 64 Gb/s and pulse amplitude modulation-4 up to 45 Gbaud (90 Gb/s). Moreover, OOK eye-diagrams up to 120 Gb/s are reported with an output swing of 3~V_{\text {ppd}} . Total harmonic distortion measurements are also conducted demonstrating a value of 5% at 1 and 8 GHz up to an input amplitude of 800 mVppd. Using a reduced number of stages in the design, the power dissipation of the integrated circuit is 550 mW, resulting in an output power to power dissipation ratio of 3.6%. To the best knowledge of the authors, this is the first time a linear driver for optical modulators demonstrates such high bandwidth and efficiency for the demonstrated data-rates. [ABSTRACT FROM PUBLISHER] |
| Copyright of IEEE Transactions on Microwave Theory & Techniques is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 126820680 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: A DC-90-GHz 4- V\mathrm{ pp} Modulator Driver in a 0.13- \mu \textm SiGe:C BiCMOS Process. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Rito%2C+Pedro%22">Rito, Pedro</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Garcia+Lopez%2C+Iria%22">Garcia Lopez, Iria</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Awny%2C+Ahmed%22">Awny, Ahmed</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ko%2C+Minsu%22">Ko, Minsu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ulusoy%2C+Ahmet+Cagri%22">Ulusoy, Ahmet Cagri</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Kissinger%2C+Dietmar%22">Kissinger, Dietmar</searchLink><relatesTo>3</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Microwave+Theory+%26+Techniques%22">IEEE Transactions on Microwave Theory & Techniques</searchLink>. Dec2017, Vol. 65 Issue 12 Part2, p5192-5202. 11p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Integrated+circuits%22">Integrated circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Distributed+amplifiers%22">Distributed amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Broadband+amplifiers%22">Broadband amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22BiCMOS+memory+circuits%22">BiCMOS memory circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+modulators%22">Electronic modulators</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this paper, a linear driver for optical modulators in a 0.13- \mu \textm SiGe:C BiCMOS technology with fT/f\text {max} of 300/500 GHz is presented. The design is implemented following a distributed amplifier topology in a differential manner. The driver features a small-signal gain of 12.5 dB and a 3-dB bandwidth of 90 GHz and delivers a maximum output amplitude of 4~V\text {pp} to a 100- $\Omega $ differential load. Delivering the maximum output swing, the large-signal gain is 10.5 dB. Time-domain measurements are performed, showing the maximum output swing with ON–OFF keying (OOK) eye-diagrams up to 64 Gb/s and pulse amplitude modulation-4 up to 45 Gbaud (90 Gb/s). Moreover, OOK eye-diagrams up to 120 Gb/s are reported with an output swing of 3~V_{\text {ppd}} . Total harmonic distortion measurements are also conducted demonstrating a value of 5% at 1 and 8 GHz up to an input amplitude of 800 mVppd. Using a reduced number of stages in the design, the power dissipation of the integrated circuit is 550 mW, resulting in an output power to power dissipation ratio of 3.6%. To the best knowledge of the authors, this is the first time a linear driver for optical modulators demonstrates such high bandwidth and efficiency for the demonstrated data-rates. [ABSTRACT FROM PUBLISHER] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Transactions on Microwave Theory & Techniques is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TMTT.2017.2757927 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 5192 Subjects: – SubjectFull: Integrated circuits Type: general – SubjectFull: Distributed amplifiers Type: general – SubjectFull: Broadband amplifiers Type: general – SubjectFull: BiCMOS memory circuits Type: general – SubjectFull: Electronic modulators Type: general Titles: – TitleFull: A DC-90-GHz 4- V\mathrm{ pp} Modulator Driver in a 0.13- \mu \textm SiGe:C BiCMOS Process. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Rito, Pedro – PersonEntity: Name: NameFull: Garcia Lopez, Iria – PersonEntity: Name: NameFull: Awny, Ahmed – PersonEntity: Name: NameFull: Ko, Minsu – PersonEntity: Name: NameFull: Ulusoy, Ahmet Cagri – PersonEntity: Name: NameFull: Kissinger, Dietmar IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 12 Text: Dec2017 Type: published Y: 2017 Identifiers: – Type: issn-print Value: 00189480 Numbering: – Type: volume Value: 65 – Type: issue Value: 12 Part2 Titles: – TitleFull: IEEE Transactions on Microwave Theory & Techniques Type: main |
| ResultId | 1 |
