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Real-time monitoring of silicon oxide deposition processes

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Title: Real-time monitoring of silicon oxide deposition processes
Authors: Gravalidis, C.1, Gioti, M.1, Laskarakis, A.1, Logothetidis, S. logot@auth.gr
Source: Surface & Coatings Technology. Mar2004, Vol. 180-181, p655. 4p.
Subjects: Ellipsometry, Thin films, Surfaces (Technology), Silicon oxide
Abstract: Multi-wavelength ellipsometry in Vis–far UV energy range has been applied for the study and the monitoring of the stoichiometry (x) and optical properties of SiOx films, grown on c-Si substrates by electron-beam evaporation technique, using different source materials (SiO2, SiO or SiOx). The ellipsometric data collected in real-time correspond to 32 different wavelengths covering the range from 1.5 up to 6.5 eV, and are fitted by applying the Tauc–Lorentz model. The calculated optical parameters, such as Penn Gap ω0 and the fundamental band gap ωg, are directly correlated to x values. In addition, the close monitoring of the deposition processes provides the ability to study the growth mechanisms that are discussed in terms of the source material and the predominant precursors during deposition. Therefore, this methodology reveals the potential for real-time control of SiOx films’ growth of desirable stoichiometry or a functionally graded one, meeting specific demands for microelectronics or other industrial applications. [Copyright &y& Elsevier]
Copyright of Surface & Coatings Technology is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 12710172
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Real-time monitoring of silicon oxide deposition processes
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  Data: <searchLink fieldCode="AR" term="%22Gravalidis%2C+C%2E%22">Gravalidis, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Gioti%2C+M%2E%22">Gioti, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Laskarakis%2C+A%2E%22">Laskarakis, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Logothetidis%2C+S%2E%22">Logothetidis, S.</searchLink><i> logot@auth.gr</i>
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  Data: <searchLink fieldCode="JN" term="%22Surface+%26+Coatings+Technology%22">Surface & Coatings Technology</searchLink>. Mar2004, Vol. 180-181, p655. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Ellipsometry%22">Ellipsometry</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Surfaces+%28Technology%29%22">Surfaces (Technology)</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+oxide%22">Silicon oxide</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Multi-wavelength ellipsometry in Vis–far UV energy range has been applied for the study and the monitoring of the stoichiometry (x) and optical properties of SiOx films, grown on c-Si substrates by electron-beam evaporation technique, using different source materials (SiO2, SiO or SiOx). The ellipsometric data collected in real-time correspond to 32 different wavelengths covering the range from 1.5 up to 6.5 eV, and are fitted by applying the Tauc–Lorentz model. The calculated optical parameters, such as Penn Gap ω0 and the fundamental band gap ωg, are directly correlated to x values. In addition, the close monitoring of the deposition processes provides the ability to study the growth mechanisms that are discussed in terms of the source material and the predominant precursors during deposition. Therefore, this methodology reveals the potential for real-time control of SiOx films’ growth of desirable stoichiometry or a functionally graded one, meeting specific demands for microelectronics or other industrial applications. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Surface & Coatings Technology is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.surfcoat.2003.10.141
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 655
    Subjects:
      – SubjectFull: Ellipsometry
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Surfaces (Technology)
        Type: general
      – SubjectFull: Silicon oxide
        Type: general
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      – TitleFull: Real-time monitoring of silicon oxide deposition processes
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              M: 03
              Text: Mar2004
              Type: published
              Y: 2004
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              Value: 180-181
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