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Large area ultraviolet photodetector on surface modified Si:GaN layers.

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Title: Large area ultraviolet photodetector on surface modified Si:GaN layers.
Authors: R., Anitha1 manithaakshi@gmail.com, R., Ramesh2, R., Loganathan3, Vavilapalli, Durga Sankar1, Baskar, K.1,4, Singh, Shubra1 shubra6@gmail.com
Source: Applied Surface Science. Mar2018, Vol. 435, p1057-1064. 8p.
Subjects: Ultraviolet radiation, Photodetectors, Heterojunctions, Gallium nitride, Zinc oxide thin films
Abstract: Unique features of semiconductor based heterostructured photoelectric devices have drawn considerable attention in the recent past. In the present work, large area UV photodetector has been fabricated utilizing interesting Zinc oxide microstructures on etched Si:GaN layers. The surface of Si:GaN layer grown by metal organic chemical vapor deposition method on sapphire has been modified by chemical etching to control the microstructure. The photodetector exhibits response to Ultraviolet light only. Optimum etching of Si:GaN was required to exhibit higher responsivity (0.96 A/W) and detectivity (∼4.87 × 10 9 Jones), the two important parameters for a photodetector. Present method offers a tunable functionality of photodetector through modification of top layer microstructure. A comparison with state of art materials has also been presented. [ABSTRACT FROM AUTHOR]
Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 127137246
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Large area ultraviolet photodetector on surface modified Si:GaN layers.
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  Data: <searchLink fieldCode="AR" term="%22R%2E%2C+Anitha%22">R., Anitha</searchLink><relatesTo>1</relatesTo><i> manithaakshi@gmail.com</i><br /><searchLink fieldCode="AR" term="%22R%2E%2C+Ramesh%22">R., Ramesh</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22R%2E%2C+Loganathan%22">R., Loganathan</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Vavilapalli%2C+Durga+Sankar%22">Vavilapalli, Durga Sankar</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Baskar%2C+K%2E%22">Baskar, K.</searchLink><relatesTo>1,4</relatesTo><br /><searchLink fieldCode="AR" term="%22Singh%2C+Shubra%22">Singh, Shubra</searchLink><relatesTo>1</relatesTo><i> shubra6@gmail.com</i>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Surface+Science%22">Applied Surface Science</searchLink>. Mar2018, Vol. 435, p1057-1064. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Ultraviolet+radiation%22">Ultraviolet radiation</searchLink><br /><searchLink fieldCode="DE" term="%22Photodetectors%22">Photodetectors</searchLink><br /><searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+nitride%22">Gallium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide+thin+films%22">Zinc oxide thin films</searchLink>
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  Label: Abstract
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  Data: Unique features of semiconductor based heterostructured photoelectric devices have drawn considerable attention in the recent past. In the present work, large area UV photodetector has been fabricated utilizing interesting Zinc oxide microstructures on etched Si:GaN layers. The surface of Si:GaN layer grown by metal organic chemical vapor deposition method on sapphire has been modified by chemical etching to control the microstructure. The photodetector exhibits response to Ultraviolet light only. Optimum etching of Si:GaN was required to exhibit higher responsivity (0.96 A/W) and detectivity (∼4.87 × 10 9 Jones), the two important parameters for a photodetector. Present method offers a tunable functionality of photodetector through modification of top layer microstructure. A comparison with state of art materials has also been presented. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.apsusc.2017.11.097
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 1057
    Subjects:
      – SubjectFull: Ultraviolet radiation
        Type: general
      – SubjectFull: Photodetectors
        Type: general
      – SubjectFull: Heterojunctions
        Type: general
      – SubjectFull: Gallium nitride
        Type: general
      – SubjectFull: Zinc oxide thin films
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      – TitleFull: Large area ultraviolet photodetector on surface modified Si:GaN layers.
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            NameFull: R., Anitha
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            NameFull: Baskar, K.
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              M: 03
              Text: Mar2018
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              Y: 2018
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              Value: 435
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            – TitleFull: Applied Surface Science
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