Thickness of surface thin oxide layers determined by impedance spectroscopy using silicon/oxide/electrolyte (SOE) structures
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| Title: | Thickness of surface thin oxide layers determined by impedance spectroscopy using silicon/oxide/electrolyte (SOE) structures |
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| Authors: | Chemla, M.1 mchemla@ccr.jussieu.fr, Bertagna, V.2, Erre, R.2, Rouelle, F.1, Petitdidier, S.3, Levy, D.3 |
| Source: | Applied Surface Science. Apr2004, Vol. 227 Issue 1-4, p193. 12p. |
| Subjects: | Semiconductors, Spectroscope, Optics, Spectrum analysis |
| Abstract: | The differential capacitance of SiO2 ultra-thin layers on Si substrate is greatly sensitive to the space charge generated within the semiconductor. In the potential scan, the determination of the capacitance/voltage characteristics in MOS devices is hindered by the high value of the tunneling leakage current. In this work, the difficulty was overcome by careful measurement of the impedance diagrams using a semiconductor/oxide/electrolyte (SOE) structure, under zero current flow. Depending on the bias potential we obtained RC equivalent circuits corresponding either to the depletion layer or to the oxide dielectric film. A novel aspect of the work is that both R and C components were derived from the data processing.In a previous work the investigation was focussed on the depletion layer, and lead to values of the resistance term in the range of a few kΩ to a few MΩ cm2, while the capacitance value was a few 10−2 μF cm−2. These results were consistent with a theoretical treatment of the bias voltage dependence of the charge distribution near the flatband potential, and constitute a new technique for the determination of the fb potential versus a reference electrode.The present work is devoted to the electrical properties of the Si surface oxide layer. The leakage resistance term of the thermal oxide layer, a few nm thick, was found equal to several 108 Ω cm2. But, the electric field within the semiconductor is not effective for the full charge of the oxide capacitance even when the polarization creates an accumulation layer. In accordance with the computed electric field within the semiconductor, the right value of the capacitance can be reached easily when the wafer is submitted to light radiation and provided the polarization of the substrate is such as to generate an inversion layer. This property leads to an accurate method for ultra-thin insulators characterization excluding tunnel leakage current. [Copyright &y& Elsevier] |
| Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 12742993 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Thickness of surface thin oxide layers determined by impedance spectroscopy using silicon/oxide/electrolyte (SOE) structures – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Chemla%2C+M%2E%22">Chemla, M.</searchLink><relatesTo>1</relatesTo><i> mchemla@ccr.jussieu.fr</i><br /><searchLink fieldCode="AR" term="%22Bertagna%2C+V%2E%22">Bertagna, V.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Erre%2C+R%2E%22">Erre, R.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Rouelle%2C+F%2E%22">Rouelle, F.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Petitdidier%2C+S%2E%22">Petitdidier, S.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Levy%2C+D%2E%22">Levy, D.</searchLink><relatesTo>3</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Surface+Science%22">Applied Surface Science</searchLink>. Apr2004, Vol. 227 Issue 1-4, p193. 12p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Spectroscope%22">Spectroscope</searchLink><br /><searchLink fieldCode="DE" term="%22Optics%22">Optics</searchLink><br /><searchLink fieldCode="DE" term="%22Spectrum+analysis%22">Spectrum analysis</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The differential capacitance of SiO2 ultra-thin layers on Si substrate is greatly sensitive to the space charge generated within the semiconductor. In the potential scan, the determination of the capacitance/voltage characteristics in MOS devices is hindered by the high value of the tunneling leakage current. In this work, the difficulty was overcome by careful measurement of the impedance diagrams using a semiconductor/oxide/electrolyte (SOE) structure, under zero current flow. Depending on the bias potential we obtained RC equivalent circuits corresponding either to the depletion layer or to the oxide dielectric film. A novel aspect of the work is that both R and C components were derived from the data processing.In a previous work the investigation was focussed on the depletion layer, and lead to values of the resistance term in the range of a few kΩ to a few MΩ cm2, while the capacitance value was a few 10−2 μF cm−2. These results were consistent with a theoretical treatment of the bias voltage dependence of the charge distribution near the flatband potential, and constitute a new technique for the determination of the fb potential versus a reference electrode.The present work is devoted to the electrical properties of the Si surface oxide layer. The leakage resistance term of the thermal oxide layer, a few nm thick, was found equal to several 108 Ω cm2. But, the electric field within the semiconductor is not effective for the full charge of the oxide capacitance even when the polarization creates an accumulation layer. In accordance with the computed electric field within the semiconductor, the right value of the capacitance can be reached easily when the wafer is submitted to light radiation and provided the polarization of the substrate is such as to generate an inversion layer. This property leads to an accurate method for ultra-thin insulators characterization excluding tunnel leakage current. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.apsusc.2003.11.070 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 12 StartPage: 193 Subjects: – SubjectFull: Semiconductors Type: general – SubjectFull: Spectroscope Type: general – SubjectFull: Optics Type: general – SubjectFull: Spectrum analysis Type: general Titles: – TitleFull: Thickness of surface thin oxide layers determined by impedance spectroscopy using silicon/oxide/electrolyte (SOE) structures Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chemla, M. – PersonEntity: Name: NameFull: Bertagna, V. – PersonEntity: Name: NameFull: Erre, R. – PersonEntity: Name: NameFull: Rouelle, F. – PersonEntity: Name: NameFull: Petitdidier, S. – PersonEntity: Name: NameFull: Levy, D. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 04 Text: Apr2004 Type: published Y: 2004 Identifiers: – Type: issn-print Value: 01694332 Numbering: – Type: volume Value: 227 – Type: issue Value: 1-4 Titles: – TitleFull: Applied Surface Science Type: main |
| ResultId | 1 |
