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Preparation and characterization of a room temperature magnetic semiconductor CoFeTaBO.

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Title: Preparation and characterization of a room temperature magnetic semiconductor CoFeTaBO.
Authors: Guo Zhen-gang1 279533441@qq.com, Yang Fu-sheng2, Lei, E.1, Liu Zhi-feng1
Source: Ferroelectrics. 2018, Vol. 522 Issue 1, p128-135. 8p.
Subjects: Magnetic semiconductors, Cobalt compounds, Magnetic properties of metals, Ferromagnetic materials, Ferromagnetism
Abstract: The structural, electrical and magnetic properties of a new semiconductor material Co-Fe-Ta-B-O are investigated. The preparation of the material is a new try to make magnetic semiconductor, which introduces a semiconducting element to a ferromagnetic metal for realizing the semiconductivity and ferromagnetism. The material exhibits an amorphous structure, and combines electrical, optical and magnetic properties simultaneously. The room temperature resistivity of Co21.9Fe16.2Ta7.9B21.4O32.6 is about 15Ω⋅cm, belonging to the typical range of semiconductors. Meanwhile, it has good optical transparency in the visible and near-infrared region, giving a direct bandgap of 3.3 eV by Tauc plot method. Moreover, the material preserves the original ferromagnetism of the metal with a Curie temperature higher than 400 K, which makes sense for the application of magnetic semiconductor. This new try opens a way to design the novel magnetic semiconductor with desirable properties, and probably will extend their application to a wide variety of electronic devices. [ABSTRACT FROM AUTHOR]
Copyright of Ferroelectrics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 127520616
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Label: Title
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  Data: Preparation and characterization of a room temperature magnetic semiconductor CoFeTaBO.
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  Data: <searchLink fieldCode="AR" term="%22Guo+Zhen-gang%22">Guo Zhen-gang</searchLink><relatesTo>1</relatesTo><i> 279533441@qq.com</i><br /><searchLink fieldCode="AR" term="%22Yang+Fu-sheng%22">Yang Fu-sheng</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Lei%2C+E%2E%22">Lei, E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Liu+Zhi-feng%22">Liu Zhi-feng</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Ferroelectrics%22">Ferroelectrics</searchLink>. 2018, Vol. 522 Issue 1, p128-135. 8p.
– Name: Subject
  Label: Subjects
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  Data: <searchLink fieldCode="DE" term="%22Magnetic+semiconductors%22">Magnetic semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Cobalt+compounds%22">Cobalt compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetic+properties+of+metals%22">Magnetic properties of metals</searchLink><br /><searchLink fieldCode="DE" term="%22Ferromagnetic+materials%22">Ferromagnetic materials</searchLink><br /><searchLink fieldCode="DE" term="%22Ferromagnetism%22">Ferromagnetism</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The structural, electrical and magnetic properties of a new semiconductor material Co-Fe-Ta-B-O are investigated. The preparation of the material is a new try to make magnetic semiconductor, which introduces a semiconducting element to a ferromagnetic metal for realizing the semiconductivity and ferromagnetism. The material exhibits an amorphous structure, and combines electrical, optical and magnetic properties simultaneously. The room temperature resistivity of Co21.9Fe16.2Ta7.9B21.4O32.6 is about 15Ω⋅cm, belonging to the typical range of semiconductors. Meanwhile, it has good optical transparency in the visible and near-infrared region, giving a direct bandgap of 3.3 eV by Tauc plot method. Moreover, the material preserves the original ferromagnetism of the metal with a Curie temperature higher than 400 K, which makes sense for the application of magnetic semiconductor. This new try opens a way to design the novel magnetic semiconductor with desirable properties, and probably will extend their application to a wide variety of electronic devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Ferroelectrics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1080/00150193.2018.1392763
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      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 128
    Subjects:
      – SubjectFull: Magnetic semiconductors
        Type: general
      – SubjectFull: Cobalt compounds
        Type: general
      – SubjectFull: Magnetic properties of metals
        Type: general
      – SubjectFull: Ferromagnetic materials
        Type: general
      – SubjectFull: Ferromagnetism
        Type: general
    Titles:
      – TitleFull: Preparation and characterization of a room temperature magnetic semiconductor CoFeTaBO.
        Type: main
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      – PersonEntity:
          Name:
            NameFull: Guo Zhen-gang
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          Name:
            NameFull: Yang Fu-sheng
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            NameFull: Lei, E.
      – PersonEntity:
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            NameFull: Liu Zhi-feng
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          Dates:
            – D: 01
              M: 01
              Text: 2018
              Type: published
              Y: 2018
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              Value: 00150193
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              Value: 522
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              Value: 1
          Titles:
            – TitleFull: Ferroelectrics
              Type: main
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