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Thermoelectric properties of two-dimensional hexagonal indium-VA.

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Title: Thermoelectric properties of two-dimensional hexagonal indium-VA.
Authors: Jing-Yun Bi1, Li-Hong Han1, Qian Wang1, Li-Yuan Wu1, Ruge Quhe1,2 quheruge@bupt.edu.cn, Peng-Fei Lu1,3 photon.bupt@gmail.com
Source: Chinese Physics B. Feb2018, Vol. 27 Issue 2, p1-1. 1p.
Subjects: Two-dimensional materials (Nanotechnology), Electric properties of nanostructured materials, Thermoelectricity, Boltzmann's equation, Transport theory
Abstract: The electrical properties and thermoelectric (TE) properties of monolayer In-VA are investigated theoretically by combining first-principles method with Boltzmann transport theory. The ultralow intrinsic thermal conductivities of 2.64 W·m−1·K−1 (InP), 1.31 W·m−1·K−1 (InAs), 0.87 W·m−1·K−1 (InSb), and 0.62 W·m−1K−1 (InBi) evaluated at room temperature are close to typical thermal conductivity values of good TE materials (κ < 2 W·m−1·K−1). The maximal ZT values of 0.779, 0.583, 0.696, 0.727, and 0.373 for InN, InP, InAs, InSb, and InBi at p-type level are calculated at 900 K, which makes In-VA potential TE material working at medium-high temperature. [ABSTRACT FROM AUTHOR]
Copyright of Chinese Physics B is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Thermoelectric properties of two-dimensional hexagonal indium-VA.
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  Data: &lt;searchLink fieldCode=&quot;JN&quot; term=&quot;%22Chinese+Physics+B%22&quot;&gt;Chinese Physics B&lt;/searchLink&gt;. Feb2018, Vol. 27 Issue 2, p1-1. 1p.
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  Data: The electrical properties and thermoelectric (TE) properties of monolayer In-VA are investigated theoretically by combining first-principles method with Boltzmann transport theory. The ultralow intrinsic thermal conductivities of 2.64 W&#183;m−1&#183;K−1 (InP), 1.31 W&#183;m−1&#183;K−1 (InAs), 0.87 W&#183;m−1&#183;K−1 (InSb), and 0.62 W&#183;m−1K−1 (InBi) evaluated at room temperature are close to typical thermal conductivity values of good TE materials (κ &lt; 2 W&#183;m−1&#183;K−1). The maximal ZT values of 0.779, 0.583, 0.696, 0.727, and 0.373 for InN, InP, InAs, InSb, and InBi at p-type level are calculated at 900 K, which makes In-VA potential TE material working at medium-high temperature. [ABSTRACT FROM AUTHOR]
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  Data: &lt;i&gt;Copyright of Chinese Physics B is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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        Value: 10.1088/1674-1056/27/2/026802
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        Text: English
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        Type: general
      – SubjectFull: Electric properties of nanostructured materials
        Type: general
      – SubjectFull: Thermoelectricity
        Type: general
      – SubjectFull: Boltzmann's equation
        Type: general
      – SubjectFull: Transport theory
        Type: general
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      – TitleFull: Thermoelectric properties of two-dimensional hexagonal indium-VA.
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            NameFull: Jing-Yun Bi
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            NameFull: Li-Hong Han
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              Text: Feb2018
              Type: published
              Y: 2018
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