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Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films.

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Title: Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films.
Authors: Zeng, Wei1, Feng, Li-Ping1 lpfeng@nwpu.edu.cn, Su, Jie1, Pan, Hai-xi1, Liu, Zheng-Tang1
Source: Journal of Alloys & Compounds. May2018, Vol. 745, p834-839. 6p.
Subjects: Deuterium, Thin films, Atomic layer deposition, Field-effect transistors, Flexible electronics, Electron mobility
Abstract: Atomically thin Tungsten disufide (WS 2 ) film is a promising material for flexible electronics and optoelectronics. The ability to prepare controllable and uniform WS 2 films over a large area is essential for their practical application. In this work, a two-step technique has been adopted to synthesize ultrathin WS 2 films by sulfurization of atomic-layer-deposited WO 3 films. A novel plasma enhanced atomic layer deposition (PEALD) process was employed to prepare ultrathin WO 3 films by using bis(tertbutylimido)-bis(dimethylamido)-tungsten and O 2 plasma as reactants. Smooth and atomically thin WS 2 films are easily prepared by sulfuring the ultrathin WO 3 films. It was observed that the thickness of WS 2 films can be controlled by adjusting the numbers of PEALD cycles. X-ray photo-emission spectroscopy exhibits that WS 2 films have good stoichiometry, and transmission electron microscopy reveals that WS 2 films are polycrystalline. The field effect transistor made on the as-grown WS 2 film exhibits n-type performance with an on/off current ratio of ∼10 5 and field-effect electron mobility of 4.5 cm 2 V −1 s −1 . The proposed growth technique for WS 2 film is attractive for its applications in next-generation flexible electronics and optoelectronics, and is useful for preparations of other transition metal dichalcogenides ultrathin films. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Alloys & Compounds is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 128415631
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Label: Title
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  Data: Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films.
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  Data: <searchLink fieldCode="AR" term="%22Zeng%2C+Wei%22">Zeng, Wei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Feng%2C+Li-Ping%22">Feng, Li-Ping</searchLink><relatesTo>1</relatesTo><i> lpfeng@nwpu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Su%2C+Jie%22">Su, Jie</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Pan%2C+Hai-xi%22">Pan, Hai-xi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Liu%2C+Zheng-Tang%22">Liu, Zheng-Tang</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Alloys+%26+Compounds%22">Journal of Alloys & Compounds</searchLink>. May2018, Vol. 745, p834-839. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Deuterium%22">Deuterium</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+layer+deposition%22">Atomic layer deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Flexible+electronics%22">Flexible electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+mobility%22">Electron mobility</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Atomically thin Tungsten disufide (WS 2 ) film is a promising material for flexible electronics and optoelectronics. The ability to prepare controllable and uniform WS 2 films over a large area is essential for their practical application. In this work, a two-step technique has been adopted to synthesize ultrathin WS 2 films by sulfurization of atomic-layer-deposited WO 3 films. A novel plasma enhanced atomic layer deposition (PEALD) process was employed to prepare ultrathin WO 3 films by using bis(tertbutylimido)-bis(dimethylamido)-tungsten and O 2 plasma as reactants. Smooth and atomically thin WS 2 films are easily prepared by sulfuring the ultrathin WO 3 films. It was observed that the thickness of WS 2 films can be controlled by adjusting the numbers of PEALD cycles. X-ray photo-emission spectroscopy exhibits that WS 2 films have good stoichiometry, and transmission electron microscopy reveals that WS 2 films are polycrystalline. The field effect transistor made on the as-grown WS 2 film exhibits n-type performance with an on/off current ratio of ∼10 5 and field-effect electron mobility of 4.5 cm 2 V −1 s −1 . The proposed growth technique for WS 2 film is attractive for its applications in next-generation flexible electronics and optoelectronics, and is useful for preparations of other transition metal dichalcogenides ultrathin films. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Alloys & Compounds is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.jallcom.2018.02.046
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 834
    Subjects:
      – SubjectFull: Deuterium
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Atomic layer deposition
        Type: general
      – SubjectFull: Field-effect transistors
        Type: general
      – SubjectFull: Flexible electronics
        Type: general
      – SubjectFull: Electron mobility
        Type: general
    Titles:
      – TitleFull: Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films.
        Type: main
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            NameFull: Zeng, Wei
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            NameFull: Feng, Li-Ping
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            NameFull: Su, Jie
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            NameFull: Pan, Hai-xi
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            NameFull: Liu, Zheng-Tang
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            – D: 15
              M: 05
              Text: May2018
              Type: published
              Y: 2018
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              Value: 745
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            – TitleFull: Journal of Alloys & Compounds
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