Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films.
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| Title: | Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films. |
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| Authors: | Zeng, Wei1, Feng, Li-Ping1 lpfeng@nwpu.edu.cn, Su, Jie1, Pan, Hai-xi1, Liu, Zheng-Tang1 |
| Source: | Journal of Alloys & Compounds. May2018, Vol. 745, p834-839. 6p. |
| Subjects: | Deuterium, Thin films, Atomic layer deposition, Field-effect transistors, Flexible electronics, Electron mobility |
| Abstract: | Atomically thin Tungsten disufide (WS 2 ) film is a promising material for flexible electronics and optoelectronics. The ability to prepare controllable and uniform WS 2 films over a large area is essential for their practical application. In this work, a two-step technique has been adopted to synthesize ultrathin WS 2 films by sulfurization of atomic-layer-deposited WO 3 films. A novel plasma enhanced atomic layer deposition (PEALD) process was employed to prepare ultrathin WO 3 films by using bis(tertbutylimido)-bis(dimethylamido)-tungsten and O 2 plasma as reactants. Smooth and atomically thin WS 2 films are easily prepared by sulfuring the ultrathin WO 3 films. It was observed that the thickness of WS 2 films can be controlled by adjusting the numbers of PEALD cycles. X-ray photo-emission spectroscopy exhibits that WS 2 films have good stoichiometry, and transmission electron microscopy reveals that WS 2 films are polycrystalline. The field effect transistor made on the as-grown WS 2 film exhibits n-type performance with an on/off current ratio of ∼10 5 and field-effect electron mobility of 4.5 cm 2 V −1 s −1 . The proposed growth technique for WS 2 film is attractive for its applications in next-generation flexible electronics and optoelectronics, and is useful for preparations of other transition metal dichalcogenides ultrathin films. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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